Datasheet > CM45N10HGU

CM45N10HGU

更新时间： 2024-09-24 17:15:31

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1205K
描述
TO-252

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CM45N10HGU 数据手册

CM45N10HGU

N-Channel 100V (D-S) Power MOSFET

Description

Applications

The CM45N10HGU is the N-Channel enhancement mode

power field effect transistors with high cell density, high

voltage planar technology. This high density process and

design have been optimized switching performance and

especially tailored to minimize on-state resistance.



AC/DC load switch

SMPS

LED power

Marking Information

Features

Marking Code = CM45N10HGU

Date Code = XXXX



VDS: 100V

ID : 47A

45N10HGU

RDS_ON(@VGS=10V) : < 18mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

XXXX

Equivalent Circuit and Pin Configuration

Ordering Information

TO-252

Part Number

Packaging

Remark

CM45N10HGU 2500/Tape & Reel

ROHS

Absolute Maximum Ratings (Tc=25 ℃ unless otherwise noted)

Parameter

Drain-source Voltage

Symbol

Maximum

Unit

VDS

VGS

100

±20

Gate-source Voltage

Tc=25°C

Tc=70°C

Continuous Drain Current

Pulsed Drain Current ⁽¹⁾

Total Power Dissipation ⁽²⁾

IDM

P_D@ Tc=25°C

Derating Factor above 25°C

RθJC

188

0.6

W/°C

°C/W

°C

Thermal Resistance Junction-to-Case ⁽²⁾

1.67

-55 to +150

Junction and Storage Temperature Range

TJ,TSTG

Feb. 2022, Rev. 1.0

1 of 5

www.appliedpowermicro.com

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