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CM1231-02SO PDF预览

CM1231-02SO

更新时间： 2024-10-03 11:15:15
品牌 Logo 应用领域
安森美 - ONSEMI 局域网PC光电二极管电视
页数 文件大小 规格书
13页 390K
描述
ESD 箝位保护阵列

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中文翻译

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CM1231-02SO 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SOIC
包装说明：R-PDSO-G6针数：6
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：1.37
Samacsys Confidence：4Samacsys Status：Released
Samacsys PartID：411119Samacsys Pin Count：6
Samacsys Part Category：TVS Diode (Uni-directional)Samacsys Package Category：SOT23 (6-Pin)
Samacsys Footprint Name：SOT-23 CASE527AJSamacsys Released Date：2017-12-28 01:09:45
Is Samacsys：N其他特性：LOW CAPACITANCE
最大钳位电压：9 V配置：COMPLEX
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：MO-178ABJESD-30 代码：R-PDSO-G6
JESD-609代码：e4湿度敏感等级：1
元件数量：4端子数量：6
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性：UNIDIRECTIONAL最大功率耗散：0.225 W
认证状态：Not Qualified子类别：Transient Suppressors
表面贴装：YES技术：AVALANCHE
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

CM1231-02SO 数据手册

 浏览型号CM1231-02SO的Datasheet PDF文件第2页浏览型号CM1231-02SO的Datasheet PDF文件第3页浏览型号CM1231-02SO的Datasheet PDF文件第4页浏览型号CM1231-02SO的Datasheet PDF文件第5页浏览型号CM1231-02SO的Datasheet PDF文件第6页浏览型号CM1231-02SO的Datasheet PDF文件第7页 
CM1231-02SO  
2, 4 and 8-Channel  
Low-Capacitance ESD  
Protection Array  
Product Description  
http://onsemi.com  
The CM1231−02SO is a member of the XtremeESDt product  
family and is specifically designed for next generation deep  
submicron ASIC protection. These devices are ideal for protecting  
systems with high data and clock rates and for circuits requiring low  
capacitive loading such as USB 2.0.  
The CM1231−02SO incorporates the PicoGuard XPt dual stage  
ESD architecture which offers dramatically higher system level ESD  
protection compared with traditional single clamp designs. In  
addition, the CM1231−02SO provides a controlled filter roll−off for  
even greater spurious EMI suppression and signal integrity.  
The CM1231−02SO protects against ESD pulses up to 12 kV  
contact on the “OUT” pins per the IEC 61000−4−2 standard.  
The device also features easily routed “pass−through” differential  
pinouts in a 6−lead SOT23 package.  
SOT23−6  
SO SUFFIX  
CASE 527AJ  
MARKING DIAGRAM  
D312 MG  
G
Features  
1
• Two Channels of ESD Protection  
• Exceeds ESD Protection to IEC61000−4−2 Level 4:  
D312  
M
G
= Specific Device Code  
= Date Code  
= Pb−Free Package  
•
12 kV Contact Discharge (OUT Pins)  
• Two−Stage Matched Clamp Architecture  
(Note: Microdot may be in either location)  
• Matching−of−Series Resistor (R) of 10 mW Typical  
• Flow−Through Routing for High−Speed Signal Integrity  
• Differential Channel Input Capacitance Matching of 0.02 pF Typical  
• Improved Powered ASIC Latchup Protection  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
CM1231−02SO  
SOT23−6 3000/Tape & Reel  
(Pb−Free)  
• Dramatic Improvement in ESD Protection vs. Best in Class  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Single−Stage Diode Arrays  
• 40% Reduction in Peak Clamping Voltage  
• 40% Reduction in Peak Residual Current  
• Withstands over 1000 ESD Strikes*  
• Available in a SOT23−6 Package  
• These Devices are Pb−Free and are RoHS Compliant  
Applications  
• USB Devices Data Port Protection  
• General High−Speed Data Line ESD Protection  
*Standard test condition is IEC61000−4−2 level 4 test circuit with each (A  
/B  
) pin subjected to 12 kV contact discharge for 1000 pulses.  
OUT OUT  
Discharges are timed at 1 second intervals and all 1000 strikes are completed in one continuous test run.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
February, 2011 − Rev. 3  
CM1231−02SO/D  
1234567...13

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