P O W E R C O M P O N E N T S
CHTA16
600
A8
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Applications
Superior Commutating
Performance at High Temperature
(di/dt)c = 14A/ms @ (dv/dt)c = 50V/µs
• Heat Regulation
• Ovens
• Coffee Makers
• Cookers
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Ideal for Most Demanding Applications
Alternistor/No Snubber Type
IGT 35 mA Max.
CHTA/CHTB16
• Light Dimming
High Temperature 150˚C Series
• Control of Inductive Loads
• Motors
16Amp - 400/600/800V - TRIAC
VDRM/VRMM 400, 600, 800V
• Transformers
Absolute Maximum Ratings
RMS On-State Current (full sine wave)
Non Repetitive Surge Peak On-State Current
CONDITIONS
SYMBOL
RATING
Tc = 125˚C
Tc = 115˚C
TO-220AB
TO-220AB Iso
IT(RMS)
16A
F =50 Hz
F =60 Hz
180A
190A
150A2s
ITSM
I2t
(Full Cycle, Tj Initial = 25 C)
˚
I2t Value for fusing
tp = 10 ms
tp = 20 µs
Critical rate of rise of on-state current
di/dt
100A/µs
IG=2 x IGT, tr<100 ns, Tj = 150 C
˚
Peak Gate Current @ Tj = 150˚C
IGM
PG(AV)
Tstg
4A
A1
A2
G
Average Gate Power Dissipation @ Tj = 150 C
1W
˚
TO-220AB Isolated
(CHTA16)
Storage Temperature Range
-40 to +150 C
˚
Operating Junction Temperature Range
Isolation Voltage (CHTA Series only)
Tj
-40 to +150 C
˚
A2
VISO
2500 VRMS
Electrical Characteristics
A1
A2
G
NOTE 1
IGT MAX @ VD =12 V, RL = 30Ω
QI-II-III
QI-II-III
QI-II-III
35mA
1.3V
VGT MAX @ VD =12 V, RL = 30Ω
TO-220AB Non-Isolated
(CHTB16)
VGD MIN @ VD =VDRM, RL = 3.3kΩ
IH MAX @ IT = 100 mA NOTE 2
IL MAX @ IG = 1.2 IGT
Tj = 150 C
0.15V
˚
35mA
50mA
80mA
500V/µs
14A/ms
QI-III
Q-II
A2
IL MAX @ IG = 1.2 IGT
dv/dt MIN @ VD = 67%VDRM (gate open) NOTE 2 Tj = 150˚C
G
(di/dt)c MIN without snubber NOTES 2 & 4
Tj = 150˚C
A1
Static Characteristics
NOTE 2
VT MAX @ ITM =22.5 A, tp = 380µs
Tj = 25˚C
Tj = 150˚C
Tj = 150˚C
Tj = 25˚C
Tj = 150˚C
1.5V
0.8V
V
R
MAX @ Threshold Voltage NOTE 2
MAX @ Dynamic Resistance NOTE 2
to
25mΩ
5µA
d
IDRM MAX @ VDRM = VRRM
IRRM MAX @ VDRM = VRRM
5.5mA
ISO9001 Certified
GENERAL NOTES
1. Minimum IGT is guaranted at 5% of IGT max.
2. For both polarities of A2 referenced to A1
3. All parameters at 25 degrees C unless otherwise specified.
4. Commutating dv/dt = 50V/µs, (exponential to 200Vpk)