Datasheet > CHTA16-600PT

CHTA16-600PT

更新时间： 2024-09-27 06:47:43

品牌	Logo	应用领域
其他 - ETC		栅极可控硅三端双向交流开关 LTE 局域网
页数	文件大小	规格书
2页	922K
描述
High Temperature 150°C Series TRIAC

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CHTA16-600PT 数据手册

P O W E R C O M P O N E N T S

CHTA16

600

Applications

Superior Commutating

Performance at High Temperature

(di/dt)c = 14A/ms @ (dv/dt)c = 50V/µs

• Heat Regulation

• Ovens

• Coffee Makers

• Cookers

Ideal for Most Demanding Applications

Alternistor/No Snubber Type

IGT 35 mA Max.

CHTA/CHTB16

• Light Dimming

High Temperature 150˚C Series

• Control of Inductive Loads

• Motors

16Amp - 400/600/800V - TRIAC

VDRM/VRMM 400, 600, 800V

• Transformers

Absolute Maximum Ratings

RMS On-State Current (full sine wave)

Non Repetitive Surge Peak On-State Current

CONDITIONS

SYMBOL

RATING

Tc = 125˚C

Tc = 115˚C

TO-220AB

TO-220AB Iso

I_T(RMS)

16A

F =50 Hz

F =60 Hz

180A

190A

150A²s

I_TSM

I²t

(Full Cycle, Tj Initial = 25 C)

I²t Value for fusing

tp = 10 ms

tp = 20 µs

Critical rate of rise of on-state current

di/dt

100A/µs

I_G=2 x I_GT, tr<100 ns, Tj = 150 C

Peak Gate Current @ Tj = 150˚C

I_GM

PG(AV)

Tstg

Average Gate Power Dissipation @ Tj = 150 C

TO-220AB Isolated

(CHTA16)

Storage Temperature Range

-40 to +150 C

Operating Junction Temperature Range

Isolation Voltage (CHTA Series only)

-40 to +150 C

V_ISO

2500 V_RMS

Electrical Characteristics

NOTE 1

I_GTMAX @ V_D=12 V, R_L= 30Ω

QI-II-III

35mA

1.3V

V_GTMAX @ V_D=12 V, R_L= 30Ω

TO-220AB Non-Isolated

(CHTB16)

V_GDMIN @ V_D=V_DRM, R_L= 3.3kΩ

I_HMAX @ I_T= 100 mA ^{NOTE 2}

I_LMAX @ I_G= 1.2 I_GT

Tj = 150 C

0.15V

35mA

50mA

80mA

500V/µs

14A/ms

QI-III

Q-II

I_LMAX @ I_G= 1.2 I_GT

dv/dt MIN @ V_D= 67%V_DRM(gate open) ^{NOTE 2}Tj = 150˚C

(di/dt)c MIN without snubber ^{NOTES 2 & 4}

Tj = 150˚C

Static Characteristics

NOTE 2

V_TMAX @ I_TM=22.5 A, tp = 380µs

Tj = 25˚C

Tj = 150˚C

Tj = 25˚C

Tj = 150˚C

1.5V

0.8V

MAX @ Threshold Voltage ^{NOTE 2}

MAX @ Dynamic Resistance ^{NOTE 2}

25mΩ

5µA

I_DRMMAX @ V_{DRM =}V_RRM

I_RRMMAX @ V_{DRM =}V_RRM

5.5mA

ISO9001 Certified

GENERAL NOTES

1. Minimum IGT is guaranted at 5% of IGT max.

2. For both polarities of A2 referenced to A1

3. All parameters at 25 degrees C unless otherwise specified.

4. Commutating dv/dt = 50V/µs, (exponential to 200Vpk)

中文翻译

下载PDF

与CHTA16-600PT相关器件

型号	品牌	获取价格	描述	数据表
CHTA16-800	ETC	获取价格	High Temperature 150°C Series TRIAC
CHTA16-800PT	ETC	获取价格	High Temperature 150°C Series TRIAC
CHTA24-400	CRYDOM	获取价格	Alternistor TRIAC, 400V V(DRM), 25A I(T)RMS, TO-220AB, TO-220AB, 3 PIN
CHTA24-400PT	CYNERGY3	获取价格	Alternistor TRIAC, 400V V(DRM), 25A I(T)RMS, TO-220AB, ISOLATED TO-220AB, 3 PIN
CHTA24-400PT	CRYDOM	获取价格	Alternistor TRIAC, 400V V(DRM), 25A I(T)RMS, TO-220AB, TO-220AB, 3 PIN
CHTA24-600	CRYDOM	获取价格	Alternistor TRIAC, 600V V(DRM), 25A I(T)RMS, TO-220AB, TO-220AB, 3 PIN
CHTA24-600	CYNERGY3	获取价格	Alternistor TRIAC, 600V V(DRM), 25A I(T)RMS, TO-220AB, ISOLATED TO-220AB, 3 PIN
CHTA24-600PT	CYNERGY3	获取价格	Alternistor TRIAC, 600V V(DRM), 25A I(T)RMS, TO-220AB, ISOLATED TO-220AB, 3 PIN
CHTA24-600PT	CRYDOM	获取价格	Alternistor TRIAC, 600V V(DRM), 25A I(T)RMS, TO-220AB, TO-220AB, 3 PIN
CHTA24-800	CRYDOM	获取价格	Alternistor TRIAC, 800V V(DRM), 25A I(T)RMS, TO-220AB, TO-220AB, 3 PIN

与CHTA16-600PT相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

19
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

15
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

18
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

27

产品中心

服务支持

精选活动

关于我们

帮助中心

CHTA16-600PT

CHTA16-600PT 数据手册

与CHTA16-600PT相关器件

与CHTA16-600PT相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

CHTA16-600PT

CHTA16-600PT 数据手册

与CHTA16-600PT相关器件

与CHTA16-600PT相关文章

您还可以找

您在本页遇到什么问题？