CF5017 series
Electrical Characteristics
3V operation (CF5017ALA, ALB, ALC, ALD)
= 2.7 to 3.6V, V = 0V, Ta = −40 to +85°C unless otherwise noted.
V
DD
SS
Rating
Parameter
Symbol
Condition
Unit
min
2.2
typ
2.4
0.3
–
max
–
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
V
Q: Measurement cct 1, V = 2.7V, I = 8mA
DD OH
V
V
OH
V
Q: Measurement cct 2, V = 2.7V, I = 8mA
DD OL
–
0.4
–
OL
V
INHN
INHN
0.7V
V
IH
DD
V
–
–
–
–
0.3V
V
IL
DD
V
V
= V
= V
–
10
10
ꢀA
ꢀA
OH
DD
Output leakage current
I
Q: Measurement cct 2, INHN = LOW
Z
–
OL
SS
CF5017ALA
f = 30MHz
–
–
–
–
7
14
20
28
38
mA
mA
mA
mA
CF5017ALB
f = 40MHz
10
14
19
Measurement cct 3, load cct 1,
INHN = open, C = 30pF
Current consumption
I
DD
L
CF5017ALC
f = 60MHz
CF5017ALD
f = 80MHz
Standby current
I
Measurement cct 3, INHN = LOW
Measurement cct 4
–
–
4
5
ꢀA
MΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
pF
ST
R
2
8
UP1
INHN pull-up resistance
R
30
150
3.5
3.5
3.5
3.0
–
300
4.03
4.03
4.03
3.45
150
11.5
9.2
UP2
CF5017ALA
CF5017ALB
CF5017ALC
CF5017ALD
2.97
2.97
2.97
2.55
50
Design value. A monitor pattern on a
wafer is tested.
AC feedback resistance
R
f1
DC feedback resistance
AC feedback capacitance
R
Measurement cct 5
f2
C
Design value. A monitor pattern on a wafer is tested.
Design value. A monitor pattern on a wafer is tested.
8.5
6.8
12.7
10
8
f
C
pF
G
Built-in capacitance
C
15
17.3
pF
D
SEIKO NPC CORPORATION —4