Datasheet > CEP81A3

CEP81A3

更新时间： 2022-01-18 18:38:00

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
5页	53K
描述
30V N Channel MOS

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数据手册

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CEP81A3 数据手册

CEP81A3/CEB81A3

PRELIMINARY

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES

30V , 100A , RDS(ON)= 4.5m @VGS=10V.

Ω

DS(ON)= 6.0m @VGS=4.5V.

Ω

Super high dense cell design for extremely low R^DS(ON)

High power and current handling capability.

TO-220 & TO-263 package.

CEB SERIES

TO-263(DD-PAK)

CEP SERIES

TO-220

ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)

Limit

Unit

Parameter

Symbol

Drain-Source Voltage

VGS

Gate-Source Voltage

100

300

100

Drain Current-Continuous

-Pulsed

Drain-Source Diode Forward Current

107

Maximum Power Dissipation

@Tc=25 C

Derate above 25 C

0.71

W/ C

Operating and Storage Temperature Range

, TSTG

-55 to 175

THERMAL CHARACTERISTICS

1.4

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

C/W

įJC

62.5

RįJA

4-132

12 3 4 5

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