Datasheet > CEP30N15L

CEP30N15L

更新时间： 2022-10-21 02:27:19

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管
页数	文件大小	规格书
4页	417K
描述
N-Channel Enhancement Mode Field Effect Transistor

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数据手册

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CEP30N15L 数据手册

CEP30N15L/CEB30N15L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

150V, 30A, R_DS(ON)= 70mΩ @V_GS= 10V.

R_DS(ON)= 80mΩ @V_GS= 5V.

Super high dense cell design for extremely low R_DS(ON)

High power and current handing capability.

Lead free product is acquired.

TO-220 & TO-263 package.

CEB SERIES

TO-263(DD-PAK)

CEP SERIES

TO-220

ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted

Parameter

Symbol

Limit

150

±20

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

Drain Current-Continuous @ T_C= 25 C

@ T_C= 100 C

I_D

Drain Current-Pulsed ^a

I_DM

120

150

Maximum Power Dissipation @ T_C= 25 C

P_D

- Derate above 25 C

1.2

W/ C

Operating and Store Temperature Range

T_J,T_stg

-55 to 175

Thermal Characteristics

Parameter

Symbol

RθJC

Limit

Units

C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

RθJA

Rev 3. 2010.Dec

http://www.cetsemi.com

Details are subject to change without notice .

12 3 4

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