Datasheet > CEP4060AL_10

CEP4060AL_10

更新时间： 2022-10-21 02:28:34

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管
页数	文件大小	规格书
4页	402K
描述
N-Channel Enhancement Mode Field Effect Transistor

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数据手册

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CEP4060AL_10 数据手册

CEP4060AL/CEB4060AL

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

60V, 17A,R_DS(ON)= 75mΩ @V_GS= 10V.

R_DS(ON)= 90mΩ @V_GS= 5.0V.

Super high dense cell design for extremely low R_DS(ON)

High power and current handing capability.

Lead free product is acquired.

TO-220 & TO-263 package.

CEB SERIES

TO-263(DD-PAK)

CEP SERIES

TO-220

ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted

Parameter

Symbol

Limit

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±20

Drain Current-Continuous @ T_C= 25 C

I_D

I_DM

@ T_C= 100 C

Drain Current-Pulsed ^a

Maximum Power Dissipation @ T_C= 25 C

- Derate above 25 C

W/ C

P_D

0.3

Operating and Store Temperature Range

TJ,Tstg

-65 to 175

Thermal Characteristics

Parameter

Symbol

RθJC

Limit

3.5

Units

C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

RθJA

62.5

Rev 2. 2010.Sep

Details are subject to change without notice .

http://www.cetsemi.com

12 3 4

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