Datasheet > CEP16N10

CEP16N10

更新时间： 2022-10-21 02:26:30

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管
页数	文件大小	规格书
4页	531K
描述
N-Channel Enhancement Mode Field Effect Transistor

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CEP16N10 数据手册

CEP16N10/CEB16N10

Electrical Characteristics T = 25 C unless otherwise noted

Parameter

Off Characteristics

Symbol

Test Condition

Min

Typ

Max

Units

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

On Characteristics ^b

BV_DSS

I_DSS

V_GS= 0V, I_D= 250µA

V_DS= 100V, V_GS= 0V

V_GS= 20V, V_DS= 0V

V_GS= -20V, V_DS= 0V

100

µA

I_GSSF

IGSSR

100

-100

V_GS(th)

R_DS(on)

g_FS

Gate Threshold Voltage

Static Drain-Source

V_GS= V_DS, I_D= 250µA

V_GS= 10V, I_D= 7A

mΩ

100

120

On-Resistance

Forward Transconductance

Dynamic Characteristics ^c

Input Capacitance

V_DS= 10V, I_D= 7A

C_iss

C_oss

C_rss

540

105

V_DS= 25V, V_GS= 0V,

f = 1.0 MHz

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics ^c

Turn-On Delay Time

t_d(on)

t_r

t_d(off)

t_f

V_DD=50V, I_D= 15A,

V_GS= 10V, R_GEN= 25Ω

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Q_g

2.8

3.7

V_DS= 80V, I_D= 15A,

V_GS= 10V

Gate-Source Charge

Q_gs

Q_gd

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage ^b

I_S

15.2

1.5

V_SD

V_GS= 0V, I_S= 15.2A

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature

b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

d. L=0.7mH, I =15.2A, VDD=25V, R =25Ω, Starting T =25 C

123 4

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