Datasheet > CEP13N10_08

CEP13N10_08

更新时间： 2022-05-13 14:35:15

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管
页数	文件大小	规格书
4页	354K
描述
N-Channel Enhancement Mode Field Effect Transistor

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数据手册

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CEP13N10_08 数据手册

CEP13N10/CEB13N10

_GS=7V

V_GS=10,9,8V

_GS=6V

25 C

_GS=5V

T_J=125 C

-55 C

VDS, Drain-to-Source Voltage (V)

VGS, Gate-to-Source Voltage (V)

Figure 1. Output Characteristics

Figure 2. Transfer Characteristics

2.6

2.2

1.8

1.4

1.0

0.6

0.2

600

500

400

300

200

100

I_D=6A

V_GS=10V

iss

oss

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-100

-50

100

150

200

VDS, Drain-to-Source Voltage (V)

TJ, Junction Temperature( C)

Figure 3. Capacitance

Figure 4. On-Resistance Variation

with Temperature

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

V_DS=V_GS

I_D=250µA

_GS=0V

10¹

10⁰

10^-1

-50 -25

25 50 75 100 125 150

0.2

0.6

1.0

1.4

1.8

2.2

TJ, Junction Temperature( C)

VSD, Body Diode Forward Voltage (V)

Figure 5. Gate Threshold Variation

with Temperature

Figure 6. Body Diode Forward Voltage

Variation with Source Current

1 234

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