Datasheet > CEG8304

CEG8304

更新时间： 2022-03-30 06:22:04

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	361K
描述
Dual P-Channel Enhancement Mode Field Effect Transistor

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CEG8304 数据手册

CEG8304

7.5

25 C

-V_GS=10,9,8,7V

4.5

-V_GS=4V

-55 C

T_J=125 C

1.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

-VDS, Drain-to-Source Voltage (V)

-VGS, Gate-to-Source Voltage (V)

Figure 1. Output Characteristics

Figure 2. Transfer Characteristics

2.2

1.9

1.6

1.3

1.0

0.7

0.4

900

750

600

450

300

150

I_D=-3.6A

V_GS=-10V

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-100

-50

100

150

200

-VDS, Drain-to-Source Voltage (V)

TJ, Junction Temperature( C)

Figure 3. Capacitance

Figure 4. On-Resistance Variation

with Temperature

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

V_DS=V_GS

_GS=0V

I_D=-250µA

10¹

10⁰

10^-1

-50 -25

25 50 75 100 125 150

0.4

0.6

0.8

1.0

1.2

1.4

TJ, Junction Temperature( C)

-VSD, Body Diode Forward Voltage (V)

Figure 5. Gate Threshold Variation

with Temperature

Figure 6. Body Diode Forward Voltage

Variation with Source Current

1 234

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