CEP85N75/CEB85N75
CEF85N75
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
VDSS
75V
75V
75V
RDS(ON)
12mΩ
12mΩ
12mΩ
ID
@VGS
10V
CEP85N75
CEB85N75
CEF85N75
86A
86A
86A e
10V
10V
D
Super high dense cell design for extremely low RDS(ON)
High power and current handing capability.
Lead free product is acquired.
.
TO-220 & TO-263 package & TO-220F full-pak for through hole.
G
S
CEB SERIES
TO-263(DD-PAK)
CEP SERIES
TO-220
CEF SERIES
TO-220F
ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted
c
Limit
Parameter
Symbol
Units
TO-220/263
TO-220F
Drain-Source Voltage
VDS
VGS
ID
75
V
V
Gate-Source Voltage
±20
86
344
200
1.33
325
50
86e
344e
75
Drain Current-Continuous
Drain Current-Pulsed a
A
f
IDM
A
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
Operating and Store Temperature Range
W
W/ C
mJ
A
PD
0.026
325
50
EAS
IAS
TJ,Tstg
-55 to 175
C
Thermal Characteristics
Parameter
Symbol
RθJC
Limit
Units
C/W
C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
0.75
62.5
2
RθJA
65
Rev 3. 2008.Sep.
http://www.cetsemi.com
Details are subject to change without notice .
1