Datasheet > CED75A3_08

CED75A3_08

更新时间： 2022-10-21 01:22:02

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管
页数	文件大小	规格书
4页	368K
描述
N-Channel Enhancement Mode Field Effect Transistor

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数据手册

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CED75A3_08 数据手册

CED75A3/CEU75A3

100

V_GS=10,8,6,4V

_GS=3V

25 C

T_J=125 C

-55 C

VDS, Drain-to-Source Voltage (V)

VGS, Gate-to-Source Voltage (V)

Figure 1. Output Characteristics

Figure 2. Transfer Characteristics

2.2

1.9

1.6

1.3

1.0

0.7

0.4

1800

1500

1200

900

600

300

I_D=30A

V_GS=10V

iss

oss

rss

-100

-50

100

150

200

VDS, Drain-to-Source Voltage (V)

TJ, Junction Temperature( C)

Figure 3. Capacitance

Figure 4. On-Resistance Variation

with Temperature

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

V_DS=V_GS

I_D=250µA

_GS=0V

10²

10¹

10⁰

0.4

0.6

0.8

1.0

1.2

1.4

-50 -25

25 50 75 100 125 150

TJ, Junction Temperature( C)

VSD, Body Diode Forward Voltage (V)

Figure 5. Gate Threshold Variation

with Temperature

Figure 6. Body Diode Forward Voltage

Variation with Source Current

1 234

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