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CED75A3_08 PDF预览

CED75A3_08

更新时间: 2022-10-21 01:22:02
品牌 Logo 应用领域
华瑞 - CET 晶体晶体管
页数 文件大小 规格书
4页 368K
描述
N-Channel Enhancement Mode Field Effect Transistor

CED75A3_08 数据手册

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CED75A3/CEU75A3  
N-Channel Enhancement Mode Field Effect Transistor  
FEATURES  
25V, 60A, RDS(ON) = 9m@VGS = 10V.  
RDS(ON) = 13m@VGS = 4.5V.  
Super high dense cell design for extremely low RDS(ON)  
.
High power and current handing capability.  
Lead free product is acquired.  
D
TO-251 & TO-252 package.  
G
D
G
S
CEU SERIES  
TO-252(D-PAK)  
CED SERIES  
TO-251(I-PAK)  
S
ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted  
c
Parameter  
Symbol  
VDS  
VGS  
ID  
Limit  
Units  
V
Drain-Source Voltage  
25  
Gate-Source Voltage  
±20  
60  
V
Drain Current-Continuous  
A
Drain Current-Pulsed a  
IDM  
200  
A
Maximum Power Dissipation @ TC = 25 C  
- Derate above 25 C  
Single Pulsed Avalanche Energy d  
Single Pulsed Avalanche Current d  
Operating and Store Temperature Range  
56  
W
PD  
0.37  
60  
W/ C  
mJ  
A
EAS  
IAS  
11  
TJ,Tstg  
-55 to 175  
C
Thermal Characteristics  
Parameter  
Symbol  
RθJC  
Limit  
2.7  
Units  
C/W  
C/W  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
RθJA  
50  
Rev 3. 2008. Jan.  
Specification and data are subject to change without notice .  
http://www.cetsemi.com  
1

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