Datasheet > CED6355

CED6355

更新时间： 2022-10-21 01:20:40

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	284K
描述
P-Channel Enhancement Mode Field Effect Transistor

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数据手册

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CED6355 数据手册

CED6355/CEU6355

-V_GS=10,8,6,4V

-V_GS=3V

25 C

T_J=125 C

-55 C

-VDS, Drain-to-Source Voltage (V)

-VGS, Gate-to-Source Voltage (V)

Figure 1. Output Characteristics

Figure 2. Transfer Characteristics

2.2

1.9

1.6

1.3

1.0

0.7

0.4

3000

2500

2000

1500

1000

500

I_D=-26A

V_GS=-10V

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-100

-50

100

150

200

-VDS, Drain-to-Source Voltage (V)

TJ, Junction Temperature( C)

Figure 3. Capacitance

Figure 4. On-Resistance Variation

with Temperature

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

10³

10²

_GS=0V

V_DS=V_GS

I_D=-250µA

10¹

10⁰

-50 -25

25 50 75 100 125 150

0.3

0.6

0.9

1.2

1.5

1.8

TJ, Junction Temperature( C)

-VSD, Body Diode Forward Voltage (V)

Figure 5. Gate Threshold Variation

with Temperature

Figure 6. Body Diode Forward Voltage

Variation with Source Current

1 234

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