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CED540L PDF预览

CED540L

更新时间: 2024-02-16 12:04:54
品牌 Logo 应用领域
华瑞 - CET 晶体晶体管
页数 文件大小 规格书
4页 675K
描述
N-Channel Enhancement Mode Field Effect Transistor

CED540L 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Is Samacsys:NBase Number Matches:1

CED540L 数据手册

 浏览型号CED540L的Datasheet PDF文件第1页浏览型号CED540L的Datasheet PDF文件第3页浏览型号CED540L的Datasheet PDF文件第4页 
CED540L/CEU540L  
Electrical Characteristics T = 25 C unless otherwise noted  
c
Parameter  
Off Characteristics  
Symbol  
Test Condition  
Min  
Typ  
Max  
Units  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate Body Leakage Current, Forward  
Gate Body Leakage Current, Reverse  
On Characteristics b  
BVDSS  
IDSS  
VGS = 0V, ID = 250µA  
VDS = 100V, VGS = 0V  
VGS = 20V, VDS = 0V  
VGS = -20V, VDS = 0V  
100  
V
25  
100  
-100  
µA  
nA  
nA  
IGSSF  
IGSSR  
Gate Threshold Voltage  
VGS(th)  
VGS = VDS, ID = 250µA  
VGS = 10V, ID = 18A  
VGS = 5V, ID = 15A  
VDS = 25V, ID = 18A  
1
3
V
Static Drain-Source  
m  
mΩ  
S
40  
43  
50  
53  
RDS(on)  
gFS  
On-Resistance  
Forward Transconductance  
14  
Dynamic Characteristics c  
Input Capacitance  
Ciss  
Coss  
Crss  
1295  
199  
40  
pF  
pF  
pF  
VDS = 25V, VGS = 0V,  
f = 1.0 MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Switching Characteristics c  
Turn-On Delay Time  
Turn-On Rise Time  
td(on)  
tr  
td(off)  
tf  
13  
3.1  
55  
5
26  
7
ns  
ns  
VDD = 50V, ID = 18A,  
VGS = 10V, RGEN = 5.1Ω  
Turn-Off Delay Time  
Turn-Off Fall Time  
110  
10  
80  
ns  
ns  
Total Gate Charge  
Qg  
40  
3.7  
10  
nC  
nC  
nC  
VDS = 80V, ID = 18A,  
VGS = 10V  
Gate-Source Charge  
Gate-Drain Charge  
Qgs  
Qgd  
Drain-Source Diode Characteristics and Maximun Ratings  
Drain-Source Diode Forward Current  
Drain-Source Diode Forward Voltage b  
Notes :  
IS  
25  
A
V
VSD  
VGS = 0V, IS = 18A  
1.3  
a.Repetitive Rating : Pulse width limited by maximum junction temperature.  
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.  
c.Guaranteed by design, not subject to production testing.  
d.L = 1mH, I = 15A, V = 50V, R = 25Ω, Starting T = 25 C  
AS  
DD  
G
J
2

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