Datasheet > CEB61A3

CEB61A3

更新时间： 2022-01-18 18:38:00

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
5页	41K
描述
30V N Channel MOS

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数据手册

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CEB61A3 数据手册

CEP61A3/CEB61A3

Jan. 2003

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES

30V , 60A , RDS(ON)=12mΩ @VGS=10V.

RDS(ON)=19mΩ @VGS=4.5V.

Super high dense cell design for extremely low R^DS(ON)

High power and current handling capability.

TO-220 & TO-263 package.

CEB SERIES

TO-263(DD-PAK)

CEP SERIES

TO-220

ABSOLUTE MAXIMUM RATINGS (T =25 C unless otherwise noted)

Limit

Unit

Parameter

Symbol

Drain-Source Voltage

Gate-Source Voltage

180

Drain Current-Continuous

-Pulsed

Drain-Source Diode Forward Current

Maximum Power Dissipation

@Tc=25 C

Derate above 25 C

0.5

W/ C

, TSTG

-65 to 175

Operating and Storage Temperature Range

THERMAL CHARACTERISTICS

C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

įJC

62.5

RįJA

4-157

12 3 4 5

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