Datasheet > CEB540N

CEB540N

更新时间： 2022-10-21 00:57:28

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管
页数	文件大小	规格书
4页	408K
描述
N-Channel Enhancement Mode Field Effect Transistor

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CEB540N 数据手册

CEP540N/CEB540N

CEF540N

V_GS=10,9V

_GS=8V

_GS=7V

25 C

_GS=6V

_GS=5V

-55 C

T_J=125 C

VDS, Drain-to-Source Voltage (V)

VGS, Gate-to-Source Voltage (V)

Figure 1. Output Characteristics

Figure 2. Transfer Characteristics

3.0

2.5

2.0

1.5

1.0

0.5

0.0

2400

2000

1600

1200

800

400

I_D=18A

V_GS=10V

iss

oss

rss

-100

-50

100

150

200

VDS, Drain-to-Source Voltage (V)

TJ, Junction Temperature( C)

Figure 3. Capacitance

Figure 4. On-Resistance Variation

with Temperature

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

V_DS=V_GS

I_D=250µA

_GS=0V

10²

10¹

10⁰

-50 -25

25 50 75 100 125 150

0.4

0.6

0.8

1.0

1.2

1.4

TJ, Junction Temperature( C)

VSD, Body Diode Forward Voltage (V)

Figure 5. Gate Threshold Variation

with Temperature

Figure 6. Body Diode Forward Voltage

Variation with Source Current

1 234

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STM32F103C8T6 替代型号

型号	品牌	替代类型	描述	数据表

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