Datasheet > CEB16N10

CEB16N10

更新时间： 2022-10-21 00:53:55

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管
页数	文件大小	规格书
4页	531K
描述
N-Channel Enhancement Mode Field Effect Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CEB16N10 数据手册

CEP16N10/CEB16N10

_GS=7V

V_GS=10,9,8V

_GS=6V

25 C

_GS=5V

T_J=125 C

-55 C

VDS, Drain-to-Source Voltage (V)

VGS, Gate-to-Source Voltage (V)

Figure 1. Output Characteristics

Figure 2. Transfer Characteristics

800

2.2

1.9

1.6

1.3

1.0

0.7

0.4

I_D=7A

V_GS=10V

700

600

iss

500

400

300

200

100

oss

rss

-100

-50

100

150

200

VDS, Drain-to-Source Voltage (V)

TJ, Junction Temperature( C)

Figure 3. Capacitance

Figure 4. On-Resistance Variation

with Temperature

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

V_DS=V_GS

I_D=250µA

_GS=0V

10¹

10⁰

10^-1

-50 -25

25 50 75 100 125 150

0.2

0.6

1.0

1.4

1.8

2.2

TJ, Junction Temperature( C)

VSD, Body Diode Forward Voltage (V)

Figure 5. Gate Threshold Variation

with Temperature

Figure 6. Body Diode Forward Voltage

Variation with Source Current

1 234

中文翻译

下载PDF

与CEB16N10相关器件

型号	品牌	描述	获取价格	数据表
CEB16N10L	CET	N-Channel Enhancement Mode Field Effect Transistor	获取价格
CEB-20D64	CUI	piezo electric diaphragm	获取价格
CEB-20FD64	CUI	piezo electric diaphragm	获取价格
CEB20N06	CET	N-Channel Enhancement Mode Field Effect Transistor	获取价格
CEB20P06	CET	P-Channel Enhancement Mode Field Effect Transistor	获取价格
CEB21A2	CET	N-Channel Enhancement Mode Field Effect Transistor	获取价格