Datasheet > CC1210

CC1210

更新时间： 2024-02-05 15:40:06

品牌	Logo	应用领域
芯科 - SILICON		电容器
页数	文件大小	规格书
38页	671K
描述
Low-power sleep mode On-hook transmission Loop or ground start operation Smooth polarity reversal

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CC1210 技术参数

生命周期：	Active	包装说明：	, 1210
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8532.24.0020	风险等级：	5.65
Is Samacsys：	N	电容器类型：	CERAMIC CAPACITOR
介电材料：	CERAMIC	JESD-609代码：	e3
安装特点：	SURFACE MOUNT	多层：	Yes
端子数量：	2	最高工作温度：	85 °C
最低工作温度：	-30 °C	封装形状：	RECTANGULAR PACKAGE
包装方法：	TR, BLISTER, 7 INCH	尺寸代码：	1210
表面贴装：	YES	端子面层：	TIN
端子形状：	WRAPAROUND	Base Number Matches：	1

CC1210 数据手册

Si3226/7

Si3208/9

1. Electrical Specifications

Table 1. Absolute Maximum Ratings and Thermal Information¹

Parameter

Symbol

Test Condition

Value

Unit

°C

Operating Temperature Range

Storage Temperature Range

–40 to 85

–55 to 150

°C

STG

Thermal Resistance, Typical

1.6

°C/W

TQFP-64

Continuous Power Dissipation

TQFP-64

T = 85 °C

Thermal Resistance, Typical

QFN-40

°C/W

Continuous Power Dissipation

QFN-40

T = 85 °C

1.7

Si3226/7

Supply Voltage

–0.5 to 4.0

–0.3 to 3.6

DD1 – DD4

Digital Input Voltage

IND

Si3208

Supply Voltage

–0.5 to 4.0

+0.4 to –110

+0.4 to –118

±100

Continuous

BAT

Battery Supply Voltage

Pulse < 10 µs

TIP, RING Current

Supply Voltage

, I

TIP RING

Si3209

–0.5 to 4.0

+0.4 to –135

+0.4 to –143

±100

Continuous

High Battery Supply Voltage

BAT

Pulse < 10 µs

TIP, RING Current

, I

TIP RING

Notes:

1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be

restricted to the conditions as specified in the operational sections of this data sheet.

2. The thermal resistance of an exposed pad package is assured when the recommended printed circuit board layout

guidelines are followed correctly. The specified performance requires that the exposed pad be soldered to an exposed

copper surface of at least equal size and that multiple vias are added to enable heat transfer between the top-side

copper surface and a large internal/bottom copper plane.

3. Operation of the Si3226 or Si3227 above 125 °C junction temperature may degrade device reliability.

4. Si3208 and Si3209 are equipped with on-chip thermal limiting circuitry that shuts down the circuit when the junction

temperature exceeds the thermal shutdown threshold. The thermal shutdown threshold should normally be set to 145

°C; when in the ringing state the thermal shutdown may be set to 200 °C. For optimal reliability long term operation of

the Si3208/Si3209 above 150 °C junction temperature should be avoided.

5. The dv/dt of the voltage applied to the VBAT pins must be limited to 10 V/µs.

Preliminary Rev. 0.33

1 2 345 6 7...38

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