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CBS10F40 PDF预览

CBS10F40

更新时间: 2024-11-27 14:56:47
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
5页 135K
描述
40 V/1 A Schottky Barrier Diode, CST2B

CBS10F40 数据手册

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CBS10F40  
Schottky Barrier Diode Silicon Epitaxial  
CBS10F40  
1. Applications  
High-Speed Switching  
2. Features  
(1) High average rectified current  
(2) Low Reverse current: IR(2) = 4.9 µA (typ.) at VR = 40 V  
3. Packaging and Internal Circuit  
1: Cathode  
2: Anode  
CST2B  
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )  
Characteristics  
Symbol  
Note  
Rating  
Unit  
Reverse voltage  
VR  
IO  
40  
1.0  
V
A
Average rectified current  
Non-repetitive peak forward surge current  
Junction temperature  
(Note 1)  
(Note 2)  
IFSM  
Tj  
3
A
150  
Storage temperature  
Tstg  
-55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Mounted on an FR4 board.  
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)  
Note 2: Measured with a 10 ms pulse.  
Start of commercial production  
2016-06  
©2016-2019  
Toshiba Electronic Devices & Storage Corporation  
2019-01-28  
Rev.2.0  
1

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