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CBS10S30,L3F(T PDF预览

CBS10S30,L3F(T

更新时间: 2024-10-02 21:14:35
品牌 Logo 应用领域
东芝 - TOSHIBA 二极管
页数 文件大小 规格书
6页 135K
描述
SIGNAL DIODE

CBS10S30,L3F(T 技术参数

生命周期:ActiveReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.74
二极管类型:RECTIFIER DIODEBase Number Matches:1

CBS10S30,L3F(T 数据手册

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CBS10S30  
Schottky Barrier Diode Silicon Epitaxial  
CBS10S30  
1. Applications  
High-Speed Switching  
2. Packaging and Internal Circuit  
1: Cathode  
2: Anode  
CST2B  
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )  
Characteristics  
Symbol  
Note  
Rating  
Unit  
V
Peak reverse voltage  
Reverse voltage  
VRM  
VR  
30  
20  
1.0  
Average rectified current  
Non-repetitive peak forward surge current  
Junction temperature  
IO  
(Note 1)  
(Note 2)  
A
IFSM  
Tj  
5
125  
Storage temperature  
Tstg  
-55 to 125  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Mounted on an FR4 board.  
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)  
Note 2: Measured with a 10 ms pulse.  
Start of commercial production  
2013-09  
2014-02-24  
Rev.3.0  
1

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