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CAT35C804ACC PDF预览

CAT35C804ACC

更新时间: 2024-01-20 12:08:57
品牌 Logo 应用领域
CATALYST 可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路
页数 文件大小 规格书
14页 88K
描述
EEPROM, 256X16, Serial, CMOS

CAT35C804ACC 技术参数

生命周期:Obsolete包装说明:, DIE OR CHIP
Reach Compliance Code:unknown风险等级:5.84
备用内存宽度:8数据保留时间-最小值:10
耐久性:10000 Write/Erase Cycles内存密度:4096 bit
内存集成电路类型:EEPROM内存宽度:16
字数:256 words字数代码:256
最高工作温度:70 °C最低工作温度:
组织:256X16封装等效代码:DIE OR CHIP
并行/串行:SERIAL电源:5 V
认证状态:Not Qualified最大待机电流:0.0001 A
子类别:EEPROMs最大压摆率:0.003 mA
标称供电电压 (Vsup):5 V技术:CMOS
温度等级:COMMERCIAL写保护:SOFTWARE
Base Number Matches:1

CAT35C804ACC 数据手册

 浏览型号CAT35C804ACC的Datasheet PDF文件第5页浏览型号CAT35C804ACC的Datasheet PDF文件第6页浏览型号CAT35C804ACC的Datasheet PDF文件第7页浏览型号CAT35C804ACC的Datasheet PDF文件第9页浏览型号CAT35C804ACC的Datasheet PDF文件第10页浏览型号CAT35C804ACC的Datasheet PDF文件第11页 
CAT35C804A  
Preliminary  
Seven instructions are used as control and status func-  
tions:  
DEVICE OPERATION  
INSTRUCTIONS  
DISBSY Disable Busy  
ENBSY Enable Busy  
The CAT35C804A instruction set includes 19 instruc-  
tions.  
EWEN  
EWDS  
NOP  
Program/Erase Enable  
Program/Erase Disable  
No Operation  
Sixinstructionsarerelatedtosecurityorwriteprotection:  
DISAC  
ENAC  
MACC  
Disable Access  
Enable Access  
Modify Access Code  
ORG  
RSR  
Select Memory Organization  
Read Status Register  
UNPROTECTED MODE  
OVMPR Override Memory Pointer Register  
RMPR  
WMPR  
Read Memory Pointer Register  
Write Memory Pointer Register  
As shipped from the factory, the CAT35C804A is in the  
unprotected mode. The access code length is set to 0,  
and the memory pointer is at address 00 hex. While in  
this mode, any portion of the E2PROM array can be read  
or written to without an access code. A portion of the  
memory may be protected from any write or clear  
operation by setting the memory pointer to the appropri-  
ate address via the WMPR (Write Memory Pointer  
Register) instruction:  
Six instructions are READ/WRITE/ERASE instructions:  
ERAL Clear All Locations  
ERASE Clear Memory Locations  
READ  
RSEQ  
WRAL  
WRITE  
Read Memory  
Read Sequentially  
Write All  
Write memory  
WMPR  
[address]  
Note: All write instructions will automatically perform a clear before  
writing data.  
Figure 8. EWEN/EWDS Timing (x8 Format)  
CS  
OP CODE  
OP0–OP7  
DI  
HIGH-Z  
DO  
5076 FHD F11  
Figure 9. EWEN/EWDS Timing (x16 Format)  
CS  
OP CODE  
OP0–OP7  
DI  
HIGH-Z  
DO  
5076 FHD F11  
Doc. No. 25043-00 2/98  
8

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