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CAT28F010TR-12TE7 PDF预览

CAT28F010TR-12TE7

更新时间: 2024-02-15 10:03:42
品牌 Logo 应用领域
安森美 - ONSEMI 可编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
16页 115K
描述
128KX8 FLASH 12V PROM, 120ns, PDSO32, 8 X 20 MM, REVERSE, TSOP-32

CAT28F010TR-12TE7 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TSOP
包装说明:8 X 20 MM, REVERSE, TSOP-32针数:32
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.14
最长访问时间:120 nsJESD-30 代码:R-PDSO-G32
JESD-609代码:e0长度:18.4 mm
内存密度:1048576 bit内存集成电路类型:FLASH
内存宽度:8湿度敏感等级:2A
功能数量:1端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:128KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1-R
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):240
编程电压:12 V认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:TIN LEAD
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
类型:NOR TYPE宽度:8 mm
Base Number Matches:1

CAT28F010TR-12TE7 数据手册

 浏览型号CAT28F010TR-12TE7的Datasheet PDF文件第2页浏览型号CAT28F010TR-12TE7的Datasheet PDF文件第3页浏览型号CAT28F010TR-12TE7的Datasheet PDF文件第4页浏览型号CAT28F010TR-12TE7的Datasheet PDF文件第5页浏览型号CAT28F010TR-12TE7的Datasheet PDF文件第6页浏览型号CAT28F010TR-12TE7的Datasheet PDF文件第7页 
CAT28F010  
Licensed Intel  
1 Megabit CMOS Flash Memory  
second source  
FEATURES  
Commercial, industrial and automotive  
Fast read access time: 90/120 ns  
temperature ranges  
Low power CMOS dissipation:  
–Active: 30 mA max (CMOS/TTL levels)  
–Standby: 1 mA max (TTL levels)  
–Standby: 100 µA max (CMOS levels)  
On-chip address and data latches  
JEDEC standard pinouts:  
–32-pin DIP  
–32-pin PLCC  
–32-pin TSOP (8 x 20)  
High speed programming:  
–10 µs per byte  
–2 Sec Typ Chip Program  
100,000 program/erase cycles  
10 year data retention  
Electronic signature  
0.5 seconds typical chip-erase  
12.0V ± 5% programming and erase voltage  
Stop timer for program/erase  
DESCRIPTION  
using a two write cycle scheme. Address and Data are  
latched to free the I/O bus and address bus during the  
write operation.  
TheCAT28F010isahighspeed128Kx8-bitelectrically  
erasable and reprogrammable Flash memory ideally  
suited for applications requiring in-system or after-sale  
code updates. Electrical erasure of the full memory  
contents is achieved typically within 0.5 second.  
The CAT28F010 is manufactured using Catalyst’s  
advancedCMOSfloatinggatetechnology. Itisdesigned  
to endure 100,000 program/erase cycles and has a data  
retention of 10 years. The device is available in JEDEC  
approved 32-pin plastic DIP, 32-pin PLCC or 32-pin  
TSOP packages.  
It is pin and Read timing compatible with standard  
EPROM and EEPROM devices. Programming and  
Erase are performed through an operation and verify  
algorithm. The instructions are input via the I/O bus,  
I/O I/O  
0
7
BLOCK DIAGRAM  
I/O BUFFERS  
ERASE VOLTAGE  
SWITCH  
WE  
DATA  
LATCH  
SENSE  
AMP  
COMMAND  
REGISTER  
PROGRAM VOLTAGE  
SWITCH  
CE, OE LOGIC  
CE  
OE  
Y-GATING  
Y-DECODER  
1,048,576 BIT  
MEMORY  
ARRAY  
A A  
16  
0
X-DECODER  
VOLTAGE VERIFY  
SWITCH  
© 2009 SCILLC. All rights reserved.  
Characteristics subject to change without notice  
Doc. No. MD-1019, Rev. G  
1

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