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CA3146E

更新时间： 2024-02-16 18:49:42
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管光电二极管放大器
页数 文件大小 规格书
12页 124K
描述
High-Voltage Transistor Arrays

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CA3146E 技术参数

是否Rohs认证： 不符合生命周期：Transferred
包装说明：SMALL OUTLINE, R-PDSO-G14Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.75
风险等级：5.7其他特性：LOW NOISE
最大集电极电流 (IC)：0.05 A集电极-发射极最大电压：30 V
配置：COMPLEX最小直流电流增益 (hFE)：30
最高频带：VERY HIGH FREQUENCY BANDJEDEC-95代码：MS-012AB
JESD-30 代码：R-PDSO-G14JESD-609代码：e0
元件数量：5端子数量：14
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：500 MHzBase Number Matches：1

CA3146E 数据手册

 浏览型号CA3146E的Datasheet PDF文件第1页浏览型号CA3146E的Datasheet PDF文件第3页浏览型号CA3146E的Datasheet PDF文件第4页浏览型号CA3146E的Datasheet PDF文件第5页浏览型号CA3146E的Datasheet PDF文件第6页浏览型号CA3146E的Datasheet PDF文件第7页 
CA3146, CA3146A, CA3183, CA3183A  
Absolute Maximum Ratings  
Thermal Information  
o
Collector-to-Emitter Voltage (V  
)
Thermal Resistance (Typical, Note 2)  
θJA ( C/W)  
CEO  
CA3146A, CA3183A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V  
CA3146, CA3183 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V  
14 Ld PDIP Package . . . . . . . . . . . . . . . . . . . . . . . .  
14 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . .  
16 Ld PDIP Package . . . . . . . . . . . . . . . . . . . . . . . .  
16 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . .  
Maximum Power Dissipation (Any One Transistor, Note 3)  
CA3146A, CA3146. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW  
CA3183A, CA3183. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW  
Maximum Junction Temperature (Die). . . . . . . . . . . . . . . . . . . . 175 C  
Maximum Junction Temperature (Plastic Package). . . . . . . . .150 C  
Maximum Storage Temperature Range (all types) . -65 C to 150 C  
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300 C  
100  
200  
95  
Collector-to-Base Voltage (V  
)
CBO  
CA3146A, CA3183A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V  
CA3146, CA3183 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V  
175  
Collector-to-Substrate Voltage (V  
, Note 1)  
CIO  
CA3146A, CA3183A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V  
CA3146, CA3183 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V  
o
o
Emitter to Base Voltage (V ) all types. . . . . . . . . . . . . . . . . . . . . 5V  
EBO  
o
o
Collector Current  
CA3146A, CA3146 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA  
CA3183A, CA3183 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75mA  
o
(SOIC - Lead Tips Only)  
Base Current (I ) - CA3183A, CA3183 . . . . . . . . . . . . . . . . . . . 20mA  
B
Operating Conditions  
o
o
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . -40 C to 85 C  
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the  
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
NOTES:  
1. The collector of each transistor is isolated from the substrate by an integral diode. The substrate must be connected to a voltage which is more  
negative than any collector voltage in order to maintain isolation between transistors, and to provide for normal transistor action. To avoid  
undesired coupling between transistors, the substrate terminal should be maintained at either DC or signal (AC) ground. A suitable bypass  
capacitor can be used to establish a signal ground.  
2. θ is measured with the component mounted on an evaluation PC board in free air.  
JA  
3. Care must be taken to avoid exceeding the maximum junction temperature. Use the total power dissipation (all transistors) and thermal  
resistances to calculate the junction temperature.  
Electrical Specifications CA3146 Series  
TEST CONDITIONS TYPICAL  
PERF.  
CA3146  
TYP  
CA3146A  
TYP  
CURVE  
FIG. NO.  
o
PARAMETER  
SYMBOL  
T
= 25 C  
MN  
MAX  
MIN  
MAX UNITS  
A
DC CHARACTERISTICS FOR EACH TRANSISTOR  
Collector-to-Base  
Breakdown Voltage  
V
V
I
I
= 10µA, I = 0  
-
-
-
40  
30  
40  
72  
56  
72  
7
-
-
-
50  
40  
50  
72  
56  
72  
7
-
-
-
V
V
V
(BR)CBO  
C
E
Collector-to-Emitter  
Breakdown Voltage  
= 1mA, I = 0  
B
(BR)CEO  
C
Collector-to-Substrate  
Breakdown Voltage  
V
I
I
= 10µA, I = 0,  
(BR)CIO  
CI  
E
B
= 0  
Emitter-to-Base Breakdown Voltage  
Collector-Cutoff Current  
V
I
= 10µA, I = 0  
-
5
-
-
5
-
-
V
(BR)EBO  
E
C
I
I
V
= 10V, I = 0  
1
See  
Curve  
5
See  
Curve  
5
µA  
CEO  
CE  
B
Collector-Cutoff Current  
V
V
V
V
V
= 10V, I = 0  
2
3
3
3
4
5
-
0.002  
85  
100  
-
0.002  
85  
100  
nA  
-
CBO  
CB  
CE  
CE  
CE  
CE  
E
DC Forward-Current Transfer  
Ratio  
h
= 5V, I = 10mA  
-
30  
-
-
-
30  
-
-
FE  
BE  
C
= 5V, I = 1mA  
100  
90  
-
100  
90  
-
-
C
= 5V, I = 10µA  
-
0.83  
-
-
0.83  
-
-
C
Base-to-Emitter Voltage  
V
= 3V, I = 1mA  
0.63  
-
0.73  
0.33  
0.63  
-
0.73  
0.33  
V
V
C
Collector-to-Emitter  
Saturation Voltage  
V
I = 10mA, I = 1mA  
C B  
CE SAT  
DC CHARACTERISTICS FOR TRANSISTORS Q AND Q (As A Differential Amplifier)  
1
2
Magnitude of Input Offset  
Voltage |V - V  
|V  
|
V
= 5V, I = 1mA  
6, 7  
-
-
0.48  
1.9  
5
-
-
-
0.48  
1.9  
5
-
mV  
IO  
CE  
E
|
BE2  
BE1  
o
Magnitude of Base-to-Emitter  
Temperature Coefficient  
V
= 5V, I = 1mA  
-
mV/ C  
CE  
E
∆V  
BE  
----------------  
∆T  
2
1234567...12

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