CA3141
Absolute Maximum Ratings
Thermal Information
o
Inverse Voltage (PIV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Thermal Resistance (Typical, Note 1)
Peak Diode -to-Substrate Voltage . . . . . . . . . . . . . . . . . . . . . . . 30V
Peak Forward Surge Current [I (Surge)]. . . . . . . . . . . . . . . .100mA
θJA ( C/W)
PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
90
F
Maximum Power Dissipation (Any One Diode) . . . . . . . . . . . . . . 50mW
Maximum Junction Temperature (Die). . . . . . . . . . . . . . . . . . . . 175 C
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150 C
Maximum Storage Temperature Range . . . . . . . . . .-65 C to 150 C
o
DC Forward Current (I ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25mA
F
o
o
o
Operating Conditions
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Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300 C
o
o
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55 C to 125 C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θ is measured with the component mounted on an evaluation PC board in free air.
JA
o
Electrical Specifications T = 25 C
A
PARAMETER
DC Forward Voltage Drop
SYMBOL
TEST CONDITIONS
(Anode) 100µA
1mA
MIN
TYP
0.7
MAX
UNITS
V
I
-
-
0.9
1
V
V
V
V
V
F
F
0.78
0.93
50
10mA
-
1.2
-
DC Reverse Breakdown Voltage
V
I
I
= -10µA
30
30
(BR)R
F
DC Breakdown Voltage Between Any Diode and
Substrate
V
= 10µA
50
-
(BR)DI
DI
DC Reverse (Leakage) Current
I
V
V
= -20V
-
-
-
-
100
100
nA
nA
R
F
DC Reverse (Leakage) Current Between Any Diode
and Substrate
I
= 20V
DI
DI
Magnitude of Diode Offset Voltage Between Diode Pairs
Temperature Coefficient of Forward Voltage Drop
Reverse Recovery Time
V
= 20V, I = 1mA
FA
-
-
-
0.55
-1.5
-
-
-
mV
DI
o
∆V /∆T
I
I
= 1mA
mV/ C
F
F
t
= 2mA, I = 2mA
50
ns
pF
pF
pF
-
F
R
RR
Diode Capacitance
C
See Figure 4
See Figure 5
See Figure 6
0.96
D
Diode Anode-to-Substrate Capacitance
Diode Cathode-to-Substrate Capacitance
Magnitude of Cathode-to-Anode Current Ratio
C
DAI
C
DCI
|I /I
|
I
= 1mA, V = 10V
DS
0.9
-
FC FA
FA
Typical Performance Curves
1
1.2
1
o
= 25 C
T
A
0.8
0.6
I
= 10mA
0.8
0.6
0.4
0.2
0
F
I
I
= 3mA
= 1mA
F
F
I
I
= 300µA
= 100µA
F
F
0.4
I
= 10µA
F
I
I
= 1µA
F
F
0.2
0
= 100nA
2
3
4
0.1
1
10
10
10
10
-100
-50
0
50
100
150
o
TEMPERATURE ( C)
FORWARD CURRENT (µA)
FIGURE 1. DC FORWARD VOLTAGE DROP vs FORWARD
CURRENT
FIGURE 2. DC FORWARD VOLTAGE DROP vs
TEMPERATURE
2
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