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C20G

更新时间: 2024-02-22 05:11:34
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
2页 318K
描述
high voltage CMOS process

C20G 技术参数

生命周期:Contact ManufacturerReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8536.90.40.00
风险等级:5.71终端性别:FEMALE
端子和端子排类型:WIRE TERMINAL线规:20 AWG
Base Number Matches:1

C20G 数据手册

 浏览型号C20G的Datasheet PDF文件第2页 
C20G 2.0µm High Voltage  
CMOS/DMOS Process  
C20G Overview  
5V CMOS  
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Double poly, two metal layers  
integrated with  
high voltage  
lateral DMOS  
and extended  
drain PMOS—  
particularly cost  
effective for  
applications  
with a low  
P-type epitaxy over p+ substrate  
Allows the integration of 5V CMOS with high voltage  
lateral DMOS and extended drain PMOS.  
Particularly cost effective for applications with a low  
digital gate count.  
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Features  
Applications  
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5V mixed signal CMOS  
Fully enhanced with 5V on the Gate  
DMOS Blocking Voltages from 72V to >300V  
High Voltage PMOS 72V to 300V  
Isolated vertical NPN  
High Value (10k/sq) and Low TCR poly  
resistors  
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Information Technology - Ink jet printers  
heads, Digital Mirror Displays, Computer  
peripherals, Display drivers, Printer, Plotter  
Biomedical - Electrokinetics, LOAC,  
µ-Fluidics, Bio-particles Sorting, Drug  
Delivery, Ultrasound imaging  
Telecom - DWDM, VOAs, OADMs, OXCs,  
Electro-optics, Mirrors, µ-coils, RF amplifier,  
Multiplexer, SLIC, Ring generator  
Automotive - Most Applications : Speed,  
Angles, Acceleration, Pressure, I-MEMS  
Industrial AC-DC converter, Relays, Linear  
amplifier, Current regulator, HV generator  
digital gate  
count  
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Low specific RON  
Low mask count  
Double resurf technique allows wide range of  
breakdown voltage to be attained simply  
through layout variation  
BSIM3v3.22 models available in Spectre and  
HSPICE format  
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Cadence Foundry Design Kit (FDK) available  
Safe Operating Area characterised for high  
voltage devices  
D M O S
 
O n
-
Re sista n ce
 
vs B
 
re a kd o w n
 
Voltag e  
1 0 00  
1 0 0  
1 0  
1
Analog Capabilities  
T h e o r e tica l s ilico n  
lim it  
C 2 0 G  
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Double Poly Capacitor (C=0.75fF/sq µm)  
Four types of poly resistors including high  
value and low TCR  
0 .1  
1 0 0  
1 0 0 0  
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Isolated 10V vertical npn (β = 75)  
B V d ss (V )  
Simplified Cross-Section of DMOS  
G
B
S
G
D
n +  
p +  
p -to p  
p -to p  
n +  
p -b a se  
p -b a se  
27-Sep-02  
03-70-00149-00  
www.dalsasemi.com  
N -W e ll  
p -e p ita xy  

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