Datasheet > BZX85C5V6TA2

BZX85C5V6TA2

更新时间： 2024-02-02 00:54:04

品牌	Logo	应用领域
TAK_CHEONG		/
页数	文件大小	规格书
7页	846K
描述
Zener Diode, 5.6V V(Z), 7.14%, 1.3W, Silicon, Unidirectional, DO-41, HERMETIC SEALED, GLASS, DO-204AL, 2 PIN

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BZX85C5V6TA2 数据手册

BZX85C3V3 through BZX85C100 Series

APPLICATION NOTE

Since the actual voltage available from a given zener

∆T is the increase in junction temperature above the lead

diode is temperature dependent, it is necessary to determine

junction temperature under any set of operating conditions

in order to calculate its value. The following procedure is

recommended:

temperature and may be found as follows:

∆T_JL= θ_JLP_D.

may be determined from Figure 3 for dc power

conditions. For worst-case design, using expected limits of

I , limits of P and the extremes of T (∆T ) may be

Lead Temperature, T , should be determined from:

T_L= θ_LAP_D+ T_A.

estimated. Changes in voltage, V , can then be found from:

is the lead-to-ambient thermal resistance (°C/W) and P

∆V = θ_VZ∆T_J.

is the power dissipation. The value for θ will vary and

, the zener voltage temperature coefficient, is found

depends on the device mounting method. θ is generally 30

from Figure 2.

to 40°C/W for the various clips and tie points in common use

and for printed circuit board wiring.

Under high power-pulse operation, the zener voltage will

vary with time and may also be affected significantly by the

zener resistance. For best regulation, keep current

excursions as low as possible.

Surge limitations are given in Figure 5. They are lower

than would be expected by considering only junction

temperature, as current crowding effects cause temperatures

to be extremely high in small spots, resulting in device

degradation should the limits of Figure 5 be exceeded.

The temperature of the lead can also be measured using a

thermocouple placed on the lead as close as possible to the

tie point. The thermal mass connected to the tie point is

normally large enough so that it will not significantly

respond to heat surges generated in the diode as a result of

pulsed operation once steady-state conditions are achieved.

Using the measured value of T , the junction temperature

may be determined by:

T_J= T_L+ ∆T_JL

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