Datasheet > BZX85C3V3RLTA

BZX85C3V3RLTA

更新时间： 2024-01-25 07:58:41

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		测试二极管
页数	文件大小	规格书
9页	117K
描述
3.3V, 1W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

BZX85C3V3RLTA 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	DO-41
包装说明：	O-XALF-W2	针数：	2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.17
Is Samacsys：	N	其他特性：	LOW NOISE
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	ZENER DIODE
JEDEC-95代码：	DO-41	JESD-30 代码：	O-XALF-W2
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	2
封装主体材料：	UNSPECIFIED	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	UNIDIRECTIONAL	最大功率耗散：	1.3 W
认证状态：	Not Qualified	标称参考电压：	3.3 V
表面贴装：	NO	技术：	ZENER
端子面层：	Matte Tin (Sn)	端子形式：	WIRE
端子位置：	AXIAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
最大电压容差：	6.06%	工作测试电流：	80 mA
Base Number Matches：	1

BZX85C3V3RLTA 数据手册

GENERAL DATA — 1–1.3 WATT DO-41 GLASS

APPLICATION NOTE

Since the actual voltage available from a given zener diode

temperature and may be found as follows:

is temperature dependent, it is necessary to determine junc-

tiontemperatureunderanysetofoperatingconditionsinorder

to calculate its value. The following procedure is recom-

mended:

∆T = θ P .

JL JL D

may be determined from Figure 3 for dc power condi-

tions. For worst-case design, using expected limits of I , limits

ofP andtheextremesofT (∆T )maybeestimated.Changes

Lead Temperature, T , should be determined from:

in voltage, V , can then be found from:

T = θ

LA D

+ T .

∆V = θ

∆T .

, the zener voltage temperature coefficient, is found from

isthelead-to-ambientthermalresistance(°C/W)andP is

Figure 2.

Under high power-pulse operation, the zener voltage will

thepower dissipation. The value for θ willvaryanddepends

onthedevicemountingmethod.θ isgenerally30to40°C/W

for the various clips and tie points in common use and for

printed circuit board wiring.

vary with time and may also be affected significantly by the

zenerresistance. Forbestregulation, keepcurrentexcursions

as low as possible.

Surge limitations are given in Figure 5. They are lower than

would be expected by considering only junction temperature,

as current crowding effects cause temperatures to be ex-

tremely high in small spots, resulting in device degradation

should the limits of Figure 5 be exceeded.

The temperature of the lead can also be measured using a

thermocoupleplacedontheleadascloseaspossibletothetie

point. The thermal mass connected to the tie point is normally

large enough so that it will not significantly respond to heat

surges generated in the diode as a result of pulsed operation

once steady-state conditions are achieved. Using the mea-

sured value of T , the junction temperature may be deter-

mined by:

T = T + ∆T .

∆T is the increase in junction temperature above the lead

Motorola TVS/Zener Device Data

1–1.3 Watt DO-41 Glass Data Sheet

6-23

1 2 345 6 7...9

下载PDF

与BZX85C3V3RLTA相关器件

型号	品牌	描述	获取价格	数据表
BZX85C3V3RLTA2	MOTOROLA	3.3V, 1W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41	获取价格
BZX85C3V3-T	RECTRON	Zener Diode, 3.3V V(Z), 6%, 1.3W, Silicon, Unidirectional, DO-41, DO-41, 2 PIN	获取价格
BZX85C3V3T26A	TI	3.3V, 1.3W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41	获取价格
BZX85C3V3T26R	TI	3.3V, 1.3W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41	获取价格
BZX85C3V3T50A	FAIRCHILD	3.3 V, 1.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41	获取价格
BZX85C3V3T50R	TI	3.3V, 1.3W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41	获取价格

与BZX85C3V3RLTA相关文章

PCF8574资料解读：主要参数分析、引脚说明
2024-05-21

6
AD637数据手册解读：主要特性、引脚及其功能解读、电气参数
2024-05-21

5
ADUM1201资料手册解读：参数分析、引脚说明、应用分析
2024-05-21

8
一文带你了解压敏电阻器在直流电路中的过压保护作用
2024-05-21

4

产品中心

服务支持

精选活动

关于我们

帮助中心

BZX85C3V3RLTA

BZX85C3V3RLTA 技术参数

BZX85C3V3RLTA 数据手册

与BZX85C3V3RLTA相关器件

与BZX85C3V3RLTA相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BZX85C3V3RLTA

BZX85C3V3RLTA 技术参数

BZX85C3V3RLTA 数据手册

与BZX85C3V3RLTA相关器件

与BZX85C3V3RLTA相关文章

您还可以找

您在本页遇到什么问题？