BZX85C3V3RL2

更新时间： 2024-01-12 23:29:53

品牌	Logo	应用领域
安森美 - ONSEMI		稳压器二极管齐纳二极管测试
页数	文件大小	规格书
8页	61K
描述
1 Watt DO-41 Hermetically Sealed Glass Zener Voltage Regulators

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技术参数
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BZX85C3V3RL2 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	DO-204	包装说明：	O-LALF-W2
针数：	2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.17	Is Samacsys：	N
其他特性：	METALLURGICALLY BONDED	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	ZENER DIODE	最大动态阻抗：	20 Ω
JEDEC-95代码：	DO-41	JESD-30 代码：	O-LALF-W2
元件数量：	1	端子数量：	2
最高工作温度：	200 °C	封装主体材料：	GLASS
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	UNIDIRECTIONAL
最大功率耗散：	1.3 W	认证状态：	Not Qualified
标称参考电压：	3.3 V	子类别：	Voltage Reference Diodes
表面贴装：	NO	技术：	ZENER
端子形式：	WIRE	端子位置：	AXIAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	最大电压容差：	6.06%
工作测试电流：	80 mA	Base Number Matches：	1

BZX85C3V3RL2 数据手册

BZX85C3V3RL Series

APPLICATION NOTE

T_J= T_L+ ∆T_JL

Since the actual voltage available from a given zener

∆T_JL= θ_JLP_D.

diode is temperature dependent, it is necessary to determine

junction temperature under any set of operating conditions

in order to calculate its value. The following procedure is

recommended:

may be determined from Figure 3 for dc power

conditions. For worst-case design, using expected limits of

I , limits of P and the extremes of T (∆T ) may be

Lead Temperature, T , should be determined from:

estimated. Changes in voltage, V , can then be found from:

T_L= θ_LAP_D+ T_A.

∆V = θ_VZ∆T_J.

is the lead-to-ambient thermal resistance (°C/W) and P

, the zener voltage temperature coefficient, is found

is the power dissipation. The value for θ will vary and

depends on the device mounting method. θ is generally 30

to 40°C/W for the various clips and tie points in common use

and for printed circuit board wiring.

The temperature of the lead can also be measured using a

thermocouple placed on the lead as close as possible to the

tie point. The thermal mass connected to the tie point is

normally large enough so that it will not significantly

respond to heat surges generated in the diode as a result of

pulsed operation once steady-state conditions are achieved.

from Figure 2.

Under high power-pulse operation, the zener voltage will

vary with time and may also be affected significantly by the

zener resistance. For best regulation, keep current

excursions as low as possible.

Surge limitations are given in Figure 5. They are lower

than would be expected by considering only junction

temperature, as current crowding effects cause temperatures

to be extremely high in small spots, resulting in device

degradation should the limits of Figure 5 be exceeded.

Using the measured value of T , the junction temperature

may be determined by:

∆T is the increase in junction temperature above the lead

temperature and may be found as follows:

http://onsemi.com

1...4 5 678

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与BZX85C3V3RL2相关器件

型号	品牌	描述	获取价格	数据表
BZX85C3V3RLRL	MOTOROLA	Zener Diode, 3.3V V(Z), 6.06%, 1W, Silicon, Unidirectional, DO-41	获取价格
BZX85C3V3RLRL2	MOTOROLA	3.3V, 1W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41	获取价格
BZX85C3V3RLTA	MOTOROLA	3.3V, 1W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41	获取价格
BZX85C3V3RLTA2	MOTOROLA	3.3V, 1W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41	获取价格
BZX85C3V3-T	RECTRON	Zener Diode, 3.3V V(Z), 6%, 1.3W, Silicon, Unidirectional, DO-41, DO-41, 2 PIN	获取价格
BZX85C3V3T26A	TI	3.3V, 1.3W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41	获取价格

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