BZX84C12VLYFH
Zener Diode
(AEC-Q101 qualified)
Data sheet
ꢀ ꢀ ꢀ
●Inner Circuit
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
ꢀꢀꢀ
ꢀ
P
250
mW
D
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ ꢀ ꢀ
●Features
●Inner Circuit
High reliability
Small mold type
●Application
●Packaging Specifications
Packing
Embossed Tape
Voltage regulation
180
8
3000
T116
D4V
Reel Size(mm)
Taping Width(mm)
Quantity(pcs)
●Structure
Silicon Epitaxial Planar
Taping Code
Marking
(T = 25℃)
●Absolute Maximum Ratings
ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
a
Parameter
Symbol
Condition
Limits
250
2.0
Unit
mW
mW/°C
℃
P
D
Power dissipation
on Glass-epoxy substrate
T
Junction temperature
Storage temperature
-
-
150
-65 ~ 150ꢀ
j
T
stg
℃
(T = 25℃)
●Characteristic
ꢀ
ꢀ
a
Parameter
Zener Voltage
Symbol
Conditions
I = 5mA
Z
V = 8.0V
R
I = 5mA
Z
Min. Typ. Max. Unit
V
11.40
-
-
-
-
12.70
V
μA
Ω
Z
I
R
Z
Z
Reverse Current
Dynamic Impedance
-
-
0.1
25
γ
Z
I = 5mA
Z
Temperature Coefficient
6.8
9.8 mV/℃
Zener voltage (V ) is measured byapplying current with 40ms pulse.
Z
Dynamic resistance (Z ) is measured by applying small current (AC) and
Z
specified current (I ) simultaneously.
Z
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
www.rohm.com
© 2020 ROHMCo., Ltd. All rights reserved.
1/4
ꢀ
2020/05/14_Rev.002