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BZX84C12W PDF预览

BZX84C12W

更新时间: 2024-11-12 12:53:47
品牌 Logo 应用领域
TYSEMI 二极管测试
页数 文件大小 规格书
2页 145K
描述
Planar Die Construction, 200mW Power Dissipation

BZX84C12W 数据手册

 浏览型号BZX84C12W的Datasheet PDF文件第2页 
Product specification  
BZX84C12W  
Features  
Planar Die Construction  
200mW Power Dissipation  
Ultra-Small Surface Mount Package  
Absolute Maximum Ratings Ta = 25  
Parameter  
Forward Voltage @ IF = 10mA  
Symbol  
VF  
Rating  
0.9  
Unit  
V
Power Dissipation  
PD  
200  
mW  
K/W  
Thermal Resistance, Junction to Ambient Air  
Operating and Storage Temperature Range  
R
JA  
625  
Tj, TSTG  
-65 to +150  
Electrical Characteristics @ TA = 25 C unless otherwise specified  
Maximum  
Temperature  
Coefficient of  
Zener Voltage  
@ IZT = 5mA  
(mV/ C)  
Zener Voltage  
Range *1  
Maximum Zener Impedance*2  
Reverse Current  
*1  
Type  
Number  
VZ @ IZT  
IZT  
ZZT @ IZT ZZK @ IZK  
IZK  
IR  
@VR  
Nom (V) Min (V)  
12 11.4  
Max (V)  
12.7  
mA  
5
mA  
1
V
8
Min  
6
Max  
10  
A
BZX84C12W  
25  
150  
0.1  
*1. Short duration test pulse used to minimize self-heating effect.  
*2. f = 1KHz.  
Marking  
Marking  
KP2  
http://www.twtysemi.com  
sales@twtysemi.com  
4008-318-123  
1 of 2  

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