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BZX79C200RA1 PDF预览

BZX79C200RA1

更新时间： 2024-02-27 00:59:19
品牌 Logo 应用领域
TAK_CHEONG 测试二极管
页数 文件大小 规格书
10页 630K
描述
Zener Diode, 200V V(Z), 6%, 0.5W, Silicon, Unidirectional, DO-204AH, HERMETIC SEALED, GLASS, DO-35, 2 PIN

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BZX79C200RA1 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：DO-35包装说明：O-LALF-W2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.84其他特性：METALLURGICALLY BONDED
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：ZENER DIODE
最大动态阻抗：2000 ΩJEDEC-95代码：DO-204AH
JESD-30 代码：O-LALF-W2元件数量：1
端子数量：2最高工作温度：200 °C
封装主体材料：GLASS封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
极性：UNIDIRECTIONAL最大功率耗散：0.5 W
认证状态：Not Qualified标称参考电压：200 V
子类别：Voltage Reference Diodes表面贴装：NO
技术：ZENER端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED
最大电压容差：6%工作测试电流：1 mA
Base Number Matches：1

BZX79C200RA1 数据手册

 浏览型号BZX79C200RA1的Datasheet PDF文件第3页浏览型号BZX79C200RA1的Datasheet PDF文件第4页浏览型号BZX79C200RA1的Datasheet PDF文件第5页浏览型号BZX79C200RA1的Datasheet PDF文件第7页浏览型号BZX79C200RA1的Datasheet PDF文件第8页浏览型号BZX79C200RA1的Datasheet PDF文件第9页 
BZX79C2V4 through BZX79C200 Series  
APPLICATION NOTE - ZENER VOLTAGE  
500  
400  
Since the actual voltage available from a given zener  
diode is temperature dependent, it is necessary to determine  
junction temperature under any set of operating conditions  
in order to calculate its value. The following procedure is  
recommended:  
L
L
300  
200  
100  
Lead Temperature, TL, should be determined from:  
2.4-60 V  
TL = θLAPD + TA.  
θLA is the lead-to-ambient thermal resistance (°C/W) and PD  
is the power dissipation. The value for θLA will vary and  
depends on the device mounting method. θLA is generally 30  
to 40°C/W for the various clips and tie points in common use  
and for printed circuit board wiring.  
62-200 V  
0
0
0.2  
0.4  
0.6  
0.8  
1
The temperature of the lead can also be measured using a  
thermocouple placed on the lead as close as possible to the  
tie point. The thermal mass connected to the tie point is  
normally large enough so that it will not significantly  
respond to heat surges generated in the diode as a result of  
pulsed operation once steady-state conditions are achieved.  
Using the measured value of TL, the junction temperature  
may be determined by:  
L , LEAD LENGTH TO HEAT SINK (INCH)  
Figure 2. Typical Thermal Resistance  
1000  
7000  
5000  
TYPICAL LEAKAGE CURRENT  
AT 80% OF NOMINAL  
2000  
1000  
BREAKDOWN VOLTAGE  
TJ = TL + ∆TJL.  
700  
500  
∆TJL is the increase in junction temperature above the lead  
temperature and may be found from Figure 2 for dc power:  
200  
100  
70  
∆TJL = θJLPD.  
50  
For worst-case design, using expected limits of IZ, limits  
of PD and the extremes of TJ(∆TJ) may be estimated.  
Changes in voltage, VZ, can then be found from:  
20  
10  
∆V = θVZTJ.  
7
5
θVZ, the zener voltage temperature coefficient, is found  
from Figures 4 and 5.  
2
1
0.7  
0.5  
Under high power-pulse operation, the zener voltage will  
vary with time and may also be affected significantly by the  
zener resistance. For best regulation, keep current  
excursions as low as possible.  
+125°C  
0.2  
Surge limitations are given in Figure 7. They are lower  
than would be expected by considering only junction  
temperature, as current crowding effects cause temperatures  
to be extremely high in small spots, resulting in device  
degradation should the limits of Figure 7 be exceeded.  
0.1  
0.07  
0.05  
0.02  
0.01  
0.007  
0.005  
+25°C  
0.002  
0.001  
14  
3
4
5
6
7
8
9
10  
11  
12  
13  
15  
V
, NOMINAL ZENER VOLTAGE (VOLTS)  
Z
Figure 3. Typical Leakage Current  
http://www.takcheong.com  
5
1...345678910

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