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BZX55C6V8RL PDF预览

BZX55C6V8RL

更新时间： 2024-02-09 05:59:00
品牌 Logo 应用领域
TAK_CHEONG 测试二极管
页数 文件大小 规格书
9页 569K
描述
Zener Diode, 6.8V V(Z), 5.88%, 0.5W, Silicon, Unidirectional, DO-35, HERMETIC SEALED, GLASS, DO-204AH, 2 PIN

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BZX55C6V8RL 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：DO-204
包装说明：O-LALF-W2针数：2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.33
Is Samacsys：N其他特性：METALLURGICALLY BONDED
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：ZENER DIODE
最大动态阻抗：8 ΩJEDEC-95代码：DO-35
JESD-30 代码：O-LALF-W2JESD-609代码：e3
元件数量：1端子数量：2
最高工作温度：200 °C最低工作温度：-65 °C
封装主体材料：GLASS封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：250
极性：UNIDIRECTIONAL最大功率耗散：0.5 W
认证状态：Not Qualified标称参考电压：6.8 V
子类别：Voltage Reference Diodes表面贴装：NO
技术：ZENER端子面层：TIN
端子形式：WIRE端子位置：AXIAL
处于峰值回流温度下的最长时间：NOT SPECIFIED最大电压容差：5.88%
工作测试电流：5 mABase Number Matches：1

BZX55C6V8RL 数据手册

 浏览型号BZX55C6V8RL的Datasheet PDF文件第2页浏览型号BZX55C6V8RL的Datasheet PDF文件第3页浏览型号BZX55C6V8RL的Datasheet PDF文件第4页浏览型号BZX55C6V8RL的Datasheet PDF文件第6页浏览型号BZX55C6V8RL的Datasheet PDF文件第7页浏览型号BZX55C6V8RL的Datasheet PDF文件第8页 
BZX55C2V4 through BZX55C91 Series  
APPLICATION NOTE - ZENER VOLTAGE  
500  
400  
Since the actual voltage available from a given zener  
diode is temperature dependent, it is necessary to determine  
junction temperature under any set of operating conditions  
in order to calculate its value. The following procedure is  
recommended:  
L
L
300  
200  
100  
Lead Temperature, TL, should be determined from:  
2.4-60 V  
TL = θLAPD + TA.  
θLA is the lead-to-ambient thermal resistance (°C/W) and PD  
is the power dissipation. The value for θLA will vary and  
depends on the device mounting method. θLA is generally 30  
to 40°C/W for the various clips and tie points in common use  
and for printed circuit board wiring.  
62-200 V  
0
0
0.2  
0.4  
0.6  
0.8  
1
The temperature of the lead can also be measured using a  
thermocouple placed on the lead as close as possible to the  
tie point. The thermal mass connected to the tie point is  
normally large enough so that it will not significantly  
respond to heat surges generated in the diode as a result of  
pulsed operation once steady-state conditions are achieved.  
Using the measured value of TL, the junction temperature  
may be determined by:  
L , LEAD LENGTH TO HEAT SINK (INCH)  
Figure 2. Typical Thermal Resistance  
1000  
7000  
5000  
TYPICAL LEAKAGE CURRENT  
AT 80% OF NOMINAL  
2000  
1000  
BREAKDOWN VOLTAGE  
TJ = TL + ∆TJL  
.
700  
500  
∆TJL is the increase in junction temperature above the lead  
temperature and may be found from Figure 2 for dc power:  
200  
100  
70  
∆TJL = θJLPD.  
50  
For worst-case design, using expected limits of IZ, limits  
of PD and the extremes of TJ(∆TJ) may be estimated.  
Changes in voltage, VZ, can then be found from:  
20  
10  
∆V = θVZTJ.  
7
5
θVZ, the zener voltage temperature coefficient, is found  
from Figures 4 and 5.  
2
1
0.7  
0.5  
Under high power-pulse operation, the zener voltage will  
vary with time and may also be affected significantly by the  
zener resistance. For best regulation, keep current  
excursions as low as possible.  
+125°C  
0.2  
Surge limitations are given in Figure 7. They are lower  
than would be expected by considering only junction  
temperature, as current crowding effects cause temperatures  
to be extremely high in small spots, resulting in device  
degradation should the limits of Figure 7 be exceeded.  
0.1  
0.07  
0.05  
0.02  
0.01  
0.007  
0.005  
+25°C  
0.002  
0.001  
14  
3
4
5
6
7
8
9
10  
11  
12  
13  
15  
V
, NOMINAL ZENER VOLTAGE (VOLTS)  
Z
Figure 3. Typical Leakage Current  
http://www.takcheong.com  
5
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