Datasheet > BZX55A3V0

BZX55A3V0

更新时间： 2022-05-14 22:12:42

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描述
0.5W Zener Diode

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BZX55A3V0 数据手册

0.5W Zener Diode - BZX55A* series

Rev 1.0

0.5W 5mA I_ZTSilicon Planar Zener diode in bare die form – 1% tolerance, “A” grade

07/04/19

Features:

Die Dimensions in µm (mils)

Tight tolerance reverse breakdown voltage

330 (12.99)

210 (8.27)

I_Rcharacterized at 125°C

Sharp reverse characteristics

Low reverse current Levels

High reliability gold back metal

Ordering Information

ANODE

The following part suffixes apply:

No suffix - MIL-STD-750 /2073 Visual Inspection

“H” - MIL-STD-750 /2073 Visual Inspection

+ MIL-PRF-38534 Class H LAT

“K” - MIL-STD-750 /2073 Visual Inspection

+ MIL-PRF-38534 Class K LAT

LAT = Lot Acceptance Test.

CHIP BACKSIDE IS CATHODE

For further information on LAT process flows see below.

www.siliconsupplies.com\quality\bare-die-lot-qualification

Supply Formats:

Mechanical Specification

Die Size (Unsawn)

Anode Pad Size

Die Thickness

330 x 330

12.99 x 12.99

µm

mils

Default – Die in Waffle Pack (400 per tray capacity)

Sawn Wafer on Tape – By specific request

Unsawn Wafer – By specific request

Lower precision V_Ztolerances:

210 x 210

8.27 x 8.27

µm

mils

200

7.87

µm

mils

Top Metal Composition

Back Metal Composition

2% - B grade, 5% - C grade

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