BZW04P-5V8 thru BZW04-376
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 2 -- Pulse Derating Curve
Fig. 1 – Peak Pulse Power Rating Curve
100
100
Non-repetitive Pulse
Waveform shown in Fig. 3
TA = 25°C
10
1
75
50
0.1
25
0
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
td -- Pulse Width (sec.)
Fig. 3 -- Pulse Waveform
150
25
50
75
150
175
200
0
100
125
TJ = 25°C
Pulse Width (td) is defined
tr = 10µsec.
TA -- Ambient Temperature (°C)
Peak Value
IPPM
as the point where the
peak current decays to
50% of IPPM
100
50
Half Value – IPPM
Fig. 4 -- Typical Junction Capacitance
2
10,000
1000
100
TJ = 25°C
f = 1.0MHz
Vsig = 50mVp-p
10/1000µsec. Waveform
as defined by R.E.A.
Measured at
Zero Bias
td
0
1.0
3.0
4.0
0
2.0
t -- Time (ms)
Fig. 5 -- Steady State Power Derating Curve
1.00
0.75
0.50
Measured at
Stand-Off
Voltage, VWM
L = 0.375" (9.5mm)
Lead Lengths
60 HZ Resistive or
Inductive Load
10
1
10
100
1000
1.6 x 1.6 x .040"
(40 x 40 x 1mm)
Copper Heat Sinks
V(BR) -- Breakdown Voltage (V)
0.25
0
Fig. 6 -- Maximum Non-Repetitive Forward
Surge Current Uni-Directional Only
200
25
50
75
150
175
200
0
100
125
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
TL -- Lead Temperature (°C)
Fig. 7 --Typical Reverse Leakage Characteristics
100
50
100
Measured at Devices
Stand-off Voltage, VWM
10
TA = 25°C
1
0.1
10
0.01
0
100
200
300
400
500
1
5
10
50
100
V(BR) -- Breakdown Voltage (V)
Number of Cycles at 60 Hz
www.vishay.com
4
Document Number 88316
08-Jul-03