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BZW03_10 PDF预览

BZW03_10

更新时间: 2024-11-19 09:05:03
品牌 Logo 应用领域
威世 - VISHAY 二极管齐纳二极管
页数 文件大小 规格书
5页 100K
描述
Zener Diodes with Surge Current Specification

BZW03_10 数据手册

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BZW03-Series  
Vishay Semiconductors  
Zener Diodes with Surge Current Specification  
Features  
• Glass passivated junction  
• Hermetically sealed package  
• Clamping time in picoseconds  
• Compliant to RoHS directive 2002/95/EC  
and in accordance to WEEE 2002/96/EC  
949588  
Halogen-free according to IEC 61249-2-21  
definition  
Applications  
• Voltage regulators and transient suppression  
circuits  
Mechanical Data  
Case: SOD-64  
Weight: approx. 858 mg  
Packaging codes/options:  
TAP / 2.5 k Ammopack (52 mm tape), 12.5 k/box  
TR / 2.5 k 10 " reel  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
l = 10 mm, TL = 25 °C  
amb = 45 °C  
Symbol  
Pdiss  
Value  
6
Unit  
W
Power dissipation  
T
Pdiss  
1.85  
W
Repetitive peak reverse power  
dissipation  
PZRM  
20  
W
W
Non repetitive peak surge power  
dissipation  
tp = 100 μs, Tj = 25 °C  
PZSM  
1000  
Tj  
Junction temperature  
175  
°C  
°C  
Tstg  
Storage temperature range  
- 65 to + 175  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
RthJA  
Value  
30  
Unit  
l = 25 mm, TL = constant  
K/W  
K/W  
Junction ambient  
RthJA  
On PC board with spacing 37.5 mm  
70  
Electrical Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
VF  
Min.  
Typ.  
Max.  
1.2  
Unit  
V
IF = 1 A  
Forward voltage  
Document Number 85602  
Rev. 1.5, 26-Aug-10  
www.vishay.com  
1
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  

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