Datasheet > BZT52B22-G

BZT52B22-G

更新时间： 2024-02-04 20:49:20

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	128K
描述
AEC-Q101 qualified

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技术参数
数据手册

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BZT52B22-G 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.55
Base Number Matches：	1

BZT52B22-G 数据手册

BZT52-G-Series

Vishay Semiconductors

www.vishay.com

100

mV/°C

100

I_Z= 5 mA

ΔV_Z

R_zj

T_j

T = 25 °C

I_Z^j= 5 mA

100 V

18122

V_Z

V_Zat I_Z= 2 mA

18136

Fig. 7 - Dynamic Resistance vs. Zener Voltage

Fig. 10 - Temperature Dependence of Zener Voltage vs.

Zener Voltage

mV/°C

ΔV_Z

at I = 5 mA

5 mA

1 mA

20 mA

I_Z

T_j

ΔV

= 5 mA

- 5

- 1

100

120 140 °C

100 V

18158

18135

V_Zat I_Z= 5 mA

≥

27 V, I = 2 mA

Fig. 8 - Temperature Dependence of Zener Voltage vs.

Fig. 11 - Change of Zener Voltage vs. Junction Temperature

Zener Voltage

0.8

1.6

0.7

V_Zat I_Z= 5 mA

ΔV = r

Zth

x I

1.4

1.2

1.0

0.8

0.6

0.4

0.2

= 5 mA

0.6

0.5

0.4

>= 56 V; I = 2.5 mA

ΔV_Z

ΔV

0.3

0.2

0.1

6.2

5.9

5.6

5.1

- 1

- 0.2

- 0.4

4.7

3.6

- 0.2

100 V

at I = 5 mA

100 120 140 C

T_j

20 40 60 80

18159

18124

Fig. 9 - Change of Zener Voltage vs. Junction Temperature

Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of

Thermal Equilibrium vs. Zener Voltage

Rev. 1.3, 27-Feb-13

Document Number: 83340

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 2 3 456 7 8

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