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BZT52-C68-Q PDF预览

BZT52-C68-Q

更新时间: 2023-09-03 20:26:31
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安世 - NEXPERIA /
页数 文件大小 规格书
12页 308K
描述
Voltage regulator diodesProduction

BZT52-C68-Q 数据手册

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Nexperia  
BZT52-Q series  
Voltage regulator diodes  
8. Limiting values  
Table 5. Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
IF  
Parameter  
Conditions  
Min  
Max  
Unit  
forward current  
-
-
250  
mA  
IZSM  
non-repetitive peak  
reverse current  
see  
Tables 8, 9  
and 10  
PZSM  
Ptot  
non-repetitive peak  
reverse power dissipation  
[1] -  
40  
W
total power dissipation  
Tamb ≤ 25 °C  
[2] -  
[3] -  
-
350  
mW  
mW  
°C  
590  
Tj  
junction temperature  
ambient temperature  
storage temperature  
150  
Tamb  
Tstg  
-55  
-65  
+150  
+150  
°C  
°C  
[1] tp = 100 μs; square wave; Tj = 25 °C prior to surge.  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.  
9. Thermal characteristics  
Table 6. Thermal characteristics  
Symbol  
Parameter  
Conditions  
Min  
[1] -  
Typ  
Max  
350  
210  
55  
Unit  
K/W  
K/W  
K/W  
Rth(j-a)  
thermal resistance from  
junction to ambient  
in free air  
-
-
-
[2] -  
[3] -  
Rth(j-sp)  
thermal resistance from  
junction to solder point  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.  
[3] Soldering point of cathode tab.  
©
BZT52-Q_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
Rev. 1 — 29 March 2023  
3 / 12  
 
 
 

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