Datasheet > BZT52-B16-Q

BZT52-B16-Q

更新时间： 2023-09-03 20:26:31

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	308K
描述
Voltage regulator diodesProduction

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BZT52-B16-Q 数据手册

Nexperia

BZT52-Q series

Voltage regulator diodes

BZT52 Sel Working

Maximum differential Reverse

Temperature Diode

Non-repetitive

-xxx-Q

voltage

V_Z(V);

I_Z= 2 mA

resistance r_dif(Ω) current I_R(μA) coefficient

capacitance peak reverse

S_Z(mV/K);

I_Z= 5 mA

C_d(pF) [1]

current

I_ZSM(A) [2]

Min

Max I_Z= 1 mA I_Z= 5 mA Max

V_R(V) Min

Max

46.1 47.9 325

44.0 50.0

0.05

32.9

42.0

51.8

0.5

50.0 52.0 350

48.0 54.0

100

0.05

35.7

46.6

57.2

0.4

[1] f = 1 MHz; V_R= 0 V.

[2] t_p= 100 μs; T_amb= 25 °C.

Table 10. Characteristics per type; BZT52-B56-Q to BZT52-C75-Q

T_j= 25 °C unless otherwise specified.

BZT52 Sel Working

Maximum differential Reverse

Temperature Diode

Non-repetitive

-xxx-Q

voltage

V_Z(V);

I_Z= 2 mA

resistance r_dif(Ω) current I_R(μA) coefficient

capacitance peak reverse

S_Z(mV/K);

I_Z= 5 mA

C_d(pF) [1]

current

I_ZSM(A) [2]

Min

Max I_Z= 0.5 mA I_Z= 2 mA Max

V_R(V) Min

Max

54.9 57.1 375

52.0 60.0

120

140

160

175

0.05

39.2

43.4

47.6

52.5

52.2

58.8

65.6

73.4

63.8

71.6

79.8

88.6

0.3

60.8 63.2 400

58.0 66.0

0.3

66.6 69.4 400

64.0 72.0

0.25

0.20

73.5 76.5 400

70.0 79.0

[1] f = 1 MHz; V_R= 0 V.

[2] t_p= 100 μs; T_amb= 25 °C.

aaa-028521

aaa-028550

(mA)

ZSM

(W)

-1

-2

-3

-1

0.4

0.6

0.8

1.0

(ms)

(V)

T_j= 25 °C

(1) T_j= 25 °C (before surge)

Fig. 2. Forward current as a function of forward

voltage; typical values (BZT52-B/C2V4-Q)

Fig. 1. Non-repetitive peak reverse power dissipation

as a function of pulse duration; maximum

values

BZT52-Q_SER

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 1 — 29 March 2023

6 / 12

1...3 4 567 8 9...12

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