Datasheet > BZD27C47P-HE3-08

BZD27C47P-HE3-08

更新时间： 2024-02-02 09:43:17

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	116K
描述
DIODE ZENER 800MW SMF DO219

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中文翻译

获取价格

数据手册

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BZD27C47P-HE3-08 数据手册

BZD27C Series

Vishay Semiconductors

www.vishay.com

Zener Diodes with Surge Current Specification

FEATURES

eSMP^®Series

Available

• Sillicon planar Zener diodes

• Low profile surface-mount package

• Zener and surge current specification

• Low leakage current

• Excellent stability

23018

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

23019

SMF (DO-219AB)

• Meets JESD 201 class 2 whisker test

• ESD capability according to AEC-Q101:

human body model: > 8 kV

machine model: > 800 V

LINKS TO ADDITIONAL RESOURCES

3D Models

• Wave and reflow solderable

• AEC-Q101 qualified available

PRIMARY CHARACTERISTICS

• Base P/N-E3 - RoHS-compliant, and commercial grade

PARAMETER

V_Zrange nom.

Test current I_ZT

V_BR

V_WM

P_PPM

VALUE

3.6 to 200

5 to 100

7 to 188

6.2 to 160

150

UNIT

•

Base P/N-HE3 - RoHS-compliant, and AEC-Q101 qualified

°C

• Compatible to SOD-123W package case outline or

SOD-123F and SOD-123FL

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

T_Jmax.

175

V_Zspecification

Circuit configuration

Polarity

Pulse current

Single

Uni-directional

ORDERING INFORMATION

DEVICE NAME

ORDERING CODE

TAPED UNITS PER REEL

MINIMUM ORDER QUANTITY

BZD27C3V6P-E3-08 to BZD27C200P-E3-08

BZD27C3V6P-HE3-08 to BZD27C200P-HE3-08

BZD27C3V6P-E3-18 to BZD27C200P-E3-18

BZD27C3V6P-HE3-18 to BZD27C200P-HE3-18

3000 per 7" reel (8 mm tape)

MOQ = 30K

BZD27C Series

10 000 per 13" reel (8 mm tape)

MOQ = 50K

PACKAGE

MOLDING COMPOUND MOISTURESENSITIVITY WHISKER TEST

PACKAGE NAME WEIGHT

SOLDERING CONDITIONS

FLAMMABILITY RATING

LEVEL

ACC. JESD 201

MSL level 1

(according J-STD-020)

SMF (DO-219AB)

15 mg

UL 94 V-0

class 2

Peak temperature max. 260 °C

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

2300

800

300

150

UNIT

K/W

T_L= 105 °C

T_A= 30 °C ⁽¹⁾

P_tot

Power dissipation

100 μs square pulse

10/1000 μs waveform

P_ZSM

P_RSM

R_thJL

Non repetitive peak surge power dissipation ⁽²⁾

Junction to lead

Mounted on epoxy-glass PCB with

3 mm x 3 mm Cu pads (≥ 40 μm thick)

Junction to ambient air

R_thJA

180

K/W

Junction temperature

Storage temperature range

Operating temperature range

T_j

T_stg

T_op

175

-65 to +175

°C

Notes

(1)

Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (≥ 40 μm thick)

T_J= 25 °C prior to surge

(2)

Rev. 2.0, 26-Feb-2021

Document Number: 85153

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

中文翻译

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