Datasheet > BZD27C27P-HE3-18

BZD27C27P-HE3-18

更新时间： 2024-01-25 18:57:20

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	116K
描述
DIODE ZENER 800MW SMF DO219

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数据手册
替代型号

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BZD27C27P-HE3-18 数据手册

BZD27C Series

Vishay Semiconductors

www.vishay.com

TYPICAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

I_RSM

(%)

t₁= 10 µs

Max. V_F

t₂= 1000 µs

100

Typ. V_F

0.1

t₁

0.6

0.8

1.0

1.2

1.4

1.6

t₂

17415

17411

V_F- Forward Voltage (V)

Fig. 1 - Forward Current vs. Forward Voltage

Fig. 4 - Non-Repetitive Peak Reverse Current Pulse Definition

10 000

Chart valid for T_J= 175 °C; T_A= 25 °C, and a duty

cycle of D = 0.5

Duty cycle D

C5V1P

C18P

C6V8P

C12P

t_p

D =

T_Jmax. - T_A

1000

100

P_ZSM

D x (R_th- Z_th(t_p)) + Z_th(t_p)

P (R_thJL

)

Typ. P_ZSM= f (tp)

C27P

C51P

P (R_thJA

)

C200P

0.5

1.0

1.5

2.0

2.5

3.0

0.001 0.01

0.1

100

1000

17412

V_R- Reverse Voltage (V)

22987

t_pPulse Width (s)

Fig. 2 - Typical Diode Capacitance vs. Reverse Voltage

Fig. 5 - Typical Repetitive Peak Surge Power

1000

3.0

Typ. Z_th= f (tp)

R_thJL= 30K/W

2.5

100

2.0

R_thJA3 mm x 3 mm pad

1.5

R_thJL

1.0 R_thJA= 180K/W

0.5

25 50 75 100 125 150 175

0.001 0.01

0.1

100

1000

22774

T_amb- Ambient Temperature (°C)

22988

t_pPulse Width (s)

Fig. 3 - Power Dissipation vs. Ambient Temperature

Fig. 6 - Typical Thermal Impedance vs. Time

Rev. 2.0, 26-Feb-2021

Document Number: 85153

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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BZD27C27P-HE3-18 替代型号

型号	品牌	替代类型	描述	数据表
BZD27C27P-HE3-08	VISHAY	类似代替	DIODE ZENER 800MW SMF DO219

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