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BYV36D PDF预览

BYV36D

更新时间: 2024-01-21 22:14:01
品牌 Logo 应用领域
海湾 - GULFSEMI 二极管功效局域网
页数 文件大小 规格书
2页 69K
描述
SINTERED GLASS JUNCTION FAST AVALANCHE RECTIFIER VOLTAGE: 800V CURRENT: 1.5A

BYV36D 技术参数

生命周期:Obsolete包装说明:E-LALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.64
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:E-LALF-W2元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:0.81 A
封装主体材料:GLASS封装形状:ELLIPTICAL
封装形式:LONG FORM认证状态:Not Qualified
参考标准:IEC-134最大重复峰值反向电压:1400 V
最大反向恢复时间:0.25 µs表面贴装:NO
技术:AVALANCHE端子形式:WIRE
端子位置:AXIALBase Number Matches:1

BYV36D 数据手册

 浏览型号BYV36D的Datasheet PDF文件第2页 
BYV36D  
SINTERED GLASS JUNCTION  
FAST AVALANCHE RECTIFIER  
VOLTAGE: 800V  
CURRENT: 1.5A  
SOD-57  
FEATURE  
Glass passivated  
High maximum operating temperature  
Low leakage current  
Excellent stability  
Guaranteed avalanche energy absorption capability  
MECHANICAL DATA  
Case: SOD-57 sintered glass case  
Terminal: Plated axial leads solderable per  
MIL-STD 202E, method 208C  
Polarity: color band denotes cathode end  
Mounting position: any  
Dimensions in millimeters  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)  
SYMBOL  
BYV36D  
units  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
800  
560  
800  
V
V
V
Maximum DC blocking Voltage  
Reverse Breakdown Voltage  
at IR =0. 1mA  
Maximum Average Forward Rectified Current  
at Ttp=60°C, lead length=10mm  
V(BR)R  
IF(AV)  
IFSM  
VF  
900min  
1.5  
V
A
Peak Forward Surge Current at t=10ms half  
sinewave  
30  
A
V
Maximum Forward Voltage at rated Forward  
Current and 25°C  
1.45  
IF = 1.0A  
5.0  
Maximum DC Reverse Current  
at rated DC blocking voltage  
Tj = 25°C  
Tj = 150°C  
IR  
µA  
nS  
mJ  
150  
Maximum Reverse Recovery Time  
(Note 1)  
Trr  
ER  
150  
Non Repetitive Reverse Avalanche Energy  
at L=120mH  
10  
Typical Diode Capacitance at f=1MHz,VR=0V  
Cd  
40  
100  
pF  
K/W  
Typical Thermal Resistance  
(Note 2)  
Rth(ja)  
Storage and Operating Junction Temperature  
Tstg, Tj  
-65 to +175  
Note:  
1. Reverse Recovery Condition IF = 0.5A, IR = 1.0A, IRR = 0.25A  
2. Device mounted on an epoxy-glass printed-circuit boars, 1.5mm thick; thichness of Cu-layer40μm  
Rev.A1  
www.gulfsemi.com  

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