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BYD33M/26 PDF预览

BYD33M/26

更新时间: 2024-09-30 20:42:31
品牌 Logo 应用领域
恩智浦 - NXP 局域网二极管
页数 文件大小 规格书
12页 71K
描述
DIODE 0.7 A, 1000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode

BYD33M/26 技术参数

生命周期:Obsolete包装说明:O-LALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.62Is Samacsys:N
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-LALF-W2元件数量:1
端子数量:2最大输出电流:0.7 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
最大重复峰值反向电压:1000 V最大反向恢复时间:0.3 µs
表面贴装:NO技术:AVALANCHE
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

BYD33M/26 数据手册

 浏览型号BYD33M/26的Datasheet PDF文件第2页浏览型号BYD33M/26的Datasheet PDF文件第3页浏览型号BYD33M/26的Datasheet PDF文件第4页浏览型号BYD33M/26的Datasheet PDF文件第5页浏览型号BYD33M/26的Datasheet PDF文件第6页浏览型号BYD33M/26的Datasheet PDF文件第7页 
DISCRETE SEMICONDUCTORS  
DATA SHEET  
k, halfpage  
BYD33 series  
Fast soft-recovery  
controlled avalanche rectifiers  
1996 Sep 18  
Product specification  
Supersedes data of 1996 Jun 05  

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