生命周期: | Obsolete | 包装说明: | O-LALF-W2 |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.80 |
风险等级: | 5.62 | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | JESD-30 代码: | O-LALF-W2 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 175 °C | 最低工作温度: | -65 °C |
最大输出电流: | 0.7 A | 封装主体材料: | GLASS |
封装形状: | ROUND | 封装形式: | LONG FORM |
认证状态: | Not Qualified | 参考标准: | IEC-134 |
最大重复峰值反向电压: | 1000 V | 最大反向恢复时间: | 0.3 µs |
表面贴装: | NO | 技术: | AVALANCHE |
端子形式: | WIRE | 端子位置: | AXIAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BYD33M-T/R | FRONTIER |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 1.3A, Silicon, | |
BYD33MZ | BL Galaxy Electrical |
获取价格 |
FAST RECOVERY RECTIFIERS | |
BYD33SERIES | ETC |
获取价格 |
Fast soft-recovery controlled avalanche rectifiers | |
BYD33U | NXP |
获取价格 |
Fast soft-recovery controlled avalanche rectifiers | |
BYD33U113 | NXP |
获取价格 |
DIODE 0.67 A, 1200 V, SILICON, SIGNAL DIODE, Signal Diode | |
BYD33U133 | NXP |
获取价格 |
DIODE 0.67 A, 1200 V, SILICON, SIGNAL DIODE, Signal Diode | |
BYD33U143 | NXP |
获取价格 |
DIODE 0.67 A, 1200 V, SILICON, SIGNAL DIODE, Signal Diode | |
BYD33UT/R | PHILIPS |
获取价格 |
Rectifier Diode, 1 Element, 1.3A, 1200V V(RRM), | |
BYD33V | NXP |
获取价格 |
Fast soft-recovery controlled avalanche rectifiers | |
BYD33V143 | NXP |
获取价格 |
DIODE 0.67 A, 1400 V, SILICON, SIGNAL DIODE, Signal Diode |