Datasheet > BVW56

BVW56

更新时间： 2022-11-30 11:31:50

品牌	Logo	应用领域
商升特 - SEMTECH		/
页数	文件大小	规格书
2页	416K
描述

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BVW56 数据手册

BAW56

Silicon Epitaxial Planar Switching Diode

Features

• Small package

• Low forward voltage

• Fast reverse recovery time

• Small total capacitance

Marking Code: A1

SOT-23 Plastic Package

Applications

• Ultra high speed switching application

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Peak Repetitive Reverse Voltage

Continuous Reverse Voltage

Symbol

V_RRM

V_R

Value

Unit

Forward Current (DC)

Single Diode Loaded

Double Diode Loaded

215

125

I_F

Repetitive Peak Forward Current

I_FRM

450

Non-repetitive Peak Forward Surge Current

at t = 1 s

at t = 1 ms

at t = 1 μs

0.5

I_FSM

Power Dissipation

P_tot

T_j

350

Operating Junction Temperature

Storage Temperature Range

150

T_stg

- 65 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Max.

Unit

Forward Voltage

at I_F= 1 mA

at I_F= 10 mA

at I_F= 50 mA

at I_F= 150 mA

V_F

715

855

1.25

Reverse Current

at V_R= 25 V

at V_R= 75 V

at V_R= 25 V, T_J= 150 C

at V_R= 75 V, T_J= 150 C

µA

I_R

Diode Capacitance

at V_R= 0 , f = 1 MHz

C_d

t_rr

Reverse Recovery Time

at I_F= I_R= 10 mA, R_L= 100 Ω

SEMTECH ELECTRONICS LTD.

Subsidiary of Sino-Tech International (BVI) Limited

Dated : 15/06/2009

下载PDF

与BVW56相关器件

型号	品牌	描述	获取价格	数据表
BVY27-100	SUNMATE	Rectifier device High efficiency recovery rectifier (Trr 50... 75ns)	获取价格
BVY27-150	SUNMATE	Rectifier device High efficiency recovery rectifier (Trr 50... 75ns)	获取价格
BVY27-200	SUNMATE	Rectifier device High efficiency recovery rectifier (Trr 50... 75ns)	获取价格
BVY27-300	SUNMATE	Rectifier device High efficiency recovery rectifier (Trr 50... 75ns)	获取价格
BVY27-400	SUNMATE	Rectifier device High efficiency recovery rectifier (Trr 50... 75ns)	获取价格
BVY27-50	SUNMATE	Rectifier device High efficiency recovery rectifier (Trr 50... 75ns)	获取价格