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BUF600AP PDF预览

BUF600AP

更新时间: 2024-02-03 08:55:57
品牌 Logo 应用领域
BB 缓冲放大器
页数 文件大小 规格书
14页 249K
描述
HIGH-SPEED BUFFER AMPLIFIER

BUF600AP 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:5.69商用集成电路类型:VIDEO AMPLIFIER
JESD-30 代码:R-PDSO-G8功能数量:1
端子数量:8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
表面贴装:YES技术:BIPOLAR
温度等级:INDUSTRIAL端子形式:GULL WING
端子位置:DUALBase Number Matches:1

BUF600AP 数据手册

 浏览型号BUF600AP的Datasheet PDF文件第1页浏览型号BUF600AP的Datasheet PDF文件第2页浏览型号BUF600AP的Datasheet PDF文件第3页浏览型号BUF600AP的Datasheet PDF文件第5页浏览型号BUF600AP的Datasheet PDF文件第6页浏览型号BUF600AP的Datasheet PDF文件第7页 
INPUT PROTECTION  
All input pins on the BUF600 and BUF601 are internally  
protected from ESD by means of a pair of back-to-back  
reverse-biased diodes to the power supplies as shown. These  
diodes will begin to conduct when the input voltage exceeds  
either power supply by about 0.7V. This situation can occur  
with loss of the amplifier’s power supplies while a signal  
source is still present. The diodes can typically withstand a  
continuous current of 30mA without destruction. To insure  
long term reliability, however, the diode current should be  
externally limited to 10mA or so whenever possible.  
Static damage has been well recognized for MOSFET de-  
vices, but any semiconductor device deserves protection  
from this potentially damaging source. The BUF600 and  
BUF601 incorporate on-chip ESD protection diodes as shown  
in Figure 1. This eliminates the need for the user to add  
external protection diodes, which can add capacitance and  
degrade AC performance.  
ESD Protection Diodes  
internally connected to  
all pins.  
The internal protection diodes are designed to withstand  
2.5kV (using the Human Body Model) and will provide  
adequate ESD protection for most normal handling proce-  
dures. However, static damage can cause subtle changes in  
amplifier input characteristics without necessarily destroy-  
ing the device. In precision amplifiers, this may cause a  
noticeable degradation of offset and drift. Therefore, static  
protection is strongly recommended when handling the  
BUF600 and BUF601.  
+VCC  
External  
Pin  
Internal  
Circuitry  
–VCC  
FIGURE 1. Internal ESD Protection.  
TYPICAL PERFORMANCE CURVES  
At VCC = ±5V, RLOAD = 10k, and TA = 25°C, unless otherwise noted.  
OFFSET VOLTAGE vs TEMPERATURE  
5
INPUT BIAS CURRENT vs TEMPERATURE  
2
4
3
2
1.8  
BUF601  
1.6  
1.4  
1.2  
1
1
BUF600  
0
–1  
0.8  
0.6  
0.4  
0.2  
0
BUF600  
BUF601  
–2  
–3  
–4  
–5  
–40  
–20  
0
20  
40  
60  
80  
100  
–40  
–20  
0
20  
40  
60  
80  
100  
Temperature (°C)  
Temperature (°C)  
INPUT IMPEDANCE vs FREQUENCY BUF600  
INPUT IMPEDANCE vs FREQUENCY BUF601  
10M  
1M  
10M  
1M  
100k  
10k  
1k  
100k  
10k  
1k  
100  
1k  
10k  
100k  
1M  
10M  
100M  
100  
1k  
10k  
100k  
1M  
10M  
100M  
Frequency (Hz)  
Frequency (Hz)  
®
4
BUF600, 601  

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