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BUD43B-1 PDF预览

BUD43B-1

更新时间: 2024-01-13 17:59:46
品牌 Logo 应用领域
安森美 - ONSEMI 开关晶体管
页数 文件大小 规格书
4页 44K
描述
2A, 350V, NPN, Si, POWER TRANSISTOR, CASE 369-07, DPAK-3

BUD43B-1 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.76
外壳连接:COLLECTOR最大集电极电流 (IC):2 A
集电极-发射极最大电压:350 V配置:SINGLE
最小直流电流增益 (hFE):6JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):13 MHzBase Number Matches:1

BUD43B-1 数据手册

 浏览型号BUD43B-1的Datasheet PDF文件第2页浏览型号BUD43B-1的Datasheet PDF文件第3页浏览型号BUD43B-1的Datasheet PDF文件第4页 
ON Semiconductort  
BUD43B  
SWITCHMODEt NPN Silicon  
Planar Power Transistor  
POWER TRANSISTORS  
2 AMPERES  
The BUD43B has an application specific state–of–the–art die  
designed for use in 220 V line operated Switchmode Power supplies  
and electronic ballast (“light ballast”). The main advantages brought  
by this new transistor are:  
700 VOLTS  
25 WATTS  
Improved Efficiency Due to Low Base Drive Requirements:  
High and Flat DC Current Gain h  
FE  
Fast and Tightened Switching Distributions  
No Coil Required in Base Circuit for Fast Turn–off  
(no current tail)  
CASE 369–07  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
350  
650  
650  
9
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
CASE 369A–13  
Collector–Emitter Sustaining Voltage  
Collector–Base Breakdown Voltage  
Collector–Emitter Breakdown Voltage  
Emitter–Base Voltage  
V
CEO  
V
CBO  
V
CES  
EBO  
MINIMUM PAD SIZES  
RECOMMENDED FOR  
SURFACE MOUNTED  
APPLICATIONS  
V
Collector Current — Continuous  
— Peak (1)  
I
C
2
4
I
I
CM  
6.7  
0.265  
Base Current — Continuous  
Base Current — Peak (1)  
I
B
1
2
Adc  
BM  
*Total Device Dissipation @ T = 25_C  
P
25  
0.2  
Watt  
W/_C  
_C  
C
D
*Derate above 25°C  
Operating and Storage Temperature  
T , T  
J
–65 to 150  
stg  
THERMAL CHARACTERISTICS  
1.6  
1.6  
Thermal Resistance  
— Junction to Case  
— Junction to Ambient  
_C/W  
0.063  
0.063  
R
R
5
71.4  
2.3  
2.3  
θ
JC  
JA  
0.090 0.090  
θ
Maximum Lead Temperature for Soldering  
Purposes: 1/8from case for 5 seconds  
T
L
260  
_C  
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
March, 2001 – Rev. 2  
BUD43B/D  

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