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BU9829GUL-W PDF预览

BU9829GUL-W

更新时间: 2022-10-18 00:35:24
品牌 Logo 应用领域
罗姆 - ROHM /
页数 文件大小 规格书
5页 142K
描述
Silicon Monolithic Integrated Circuit

BU9829GUL-W 数据手册

 浏览型号BU9829GUL-W的Datasheet PDF文件第1页浏览型号BU9829GUL-W的Datasheet PDF文件第3页浏览型号BU9829GUL-W的Datasheet PDF文件第4页浏览型号BU9829GUL-W的Datasheet PDF文件第5页 
2/4  
◇ MEMORY CELL CHARACTERISTICS(Ta=25℃, Vcc1=1.6~3.6V)  
Specification  
Parameter  
Unit  
Min.  
100,000  
10  
Typ.  
-
Max.  
Write/Erase Cycle  
Data Retention  
*1  
*1  
-
-
Cycle  
Year  
-
◇ EEPROM DC OPERATING CHARACTERISTICS  
(Unless otherwise specified Ta=-30~85℃, Vcc1=1.6~3.6V)  
Specification  
◇ EEPROM AC OPERATING CHARACTERISTICS  
(Ta=-30~85℃)  
1.6V≦Vcc1<1.8V  
1.8V≦Vcc1≦3.6V  
Parameter  
Symbol  
Unit  
test condition  
Parameter  
Symbol  
Unit  
Min. Typ. Max.  
Min. Max.  
Typ.  
Min.  
80  
80  
90  
60  
60  
50  
50  
20  
20  
-
Typ.  
Max.  
5
0.7xVcc1  
0.75xVcc1  
Vcc1+0.3  
Vcc1+0.3  
0.3xVcc1  
0.25xVcc1  
"H" Input Voltage1  
"H" Input Voltage2  
"L" Input Voltage1  
"L" Input Voltage2  
VIH1  
VIH2  
VIL1  
VIL2  
V
V
V
V
V
V
V
V
2.5V≦Vcc1≦3.6V  
SCK clock Frequency  
SCK High Time  
fSCK  
tSCKWH  
tSCKWL  
tCS  
200  
200  
200  
150  
150  
50  
2.5  
100  
-
MHz  
ns  
1.6V≦Vcc1<2.5V  
80  
-
-0.3  
-0.3  
0
2.5V≦Vcc1≦3.6V  
SCK Low Time  
ns  
1.6V≦Vcc1<2.5V  
CSB High Time  
CSB Setup Time  
CSB Hold Time  
SCK Setup Time  
SCK Hold Time  
SI Setup Time  
ns  
"L" Output Voltage1 VOL1  
"L" Output Voltage2 VOL2  
"H" Output Voltage1 VOH1  
"H" Output Voltage2 VOH2  
0.2  
0.2  
IOL=1.0mA, 2.5V≦Vcc1≦3.6V  
IOL=1.0mA, 1.6V≦Vcc1<2.5V  
IOH=-0.4mA, 2.5V≦Vcc1≦3.6V  
IOH=-100μA, 1.6V≦Vcc1<2.5V  
tCSS  
tCSH  
tSCKS  
tSCKH  
tDIS  
ns  
0
ns  
Vcc1-0.2  
Vcc1-0.2  
-1  
Vcc1  
Vcc1  
1
ns  
50  
ns  
Input Leakage Current  
ILI  
μA VIN=0V~Vcc1  
50  
ns  
Output Leakage Current ILO  
-1  
1
μA VOUT=0V~Vcc1 , CSB=Vcc1  
Vcc1=1.8V, fSCK=2MHz, tE/W=5ms  
mA  
SI Hold Time  
tDIH  
50  
ns  
Output Data Delay Time  
Output Hold Time  
Output Disable Time  
SCK Rise Time  
tPD  
-
ns  
ICC1  
-
-
-
1.5  
2.0  
0.2  
Byte Write,Page Write, Write Status Register  
tOH  
0
0
ns  
Operating current  
Write  
Vcc1=2.5V , fSCK=5MHz , tE/W=5ms  
mA  
Byte Write,Page Write, Write Status Register  
*1  
*1  
*1  
tOZ  
200  
1
-
80  
1
ns  
ICC2  
ICC3  
tRC  
-
μs  
μs  
Vcc1=1.8V , fSCK=2MHz, SO=OPEN  
SCK Fall Time  
tFC  
1
-
1
mA  
Read,Read Status Register  
Output Rise Time  
Output Fall Time  
*1  
*1  
tRO  
tFO  
50  
50  
5
-
-
50  
50  
5
ns  
ns  
Operating Current  
Read  
Vcc1=2.5V , fSCK=5MHz, SO=OPEN  
ICC4  
-
0.6  
1.0  
mA  
Read,Read Status Register  
Write Cycle Time  
tE/W  
ms  
Standby Current  
ISB  
μA Vcc1=3.6V, CSB=SCK=SI=Vcc1/GND,SO=OPEN  
Wait Time From Vcc1 on To  
EEPROM Command  
tON  
15  
15  
ms  
*1ꢀNot 100% TESTED  
LDO REGULATOR AC OPERATING CHARACTERISTICS  
(Ta=-30~85℃)  
◇ LDO REGULATOR DC OPERATING CHARACTERISTICS  
(Unless otherwise specified Ta=-30~85℃, Vcc2=2.9~3.6V)  
Specification  
2.9V≦Vcc≦3.6V  
Parameter  
Symbol  
Unit  
Test condition  
Parameter  
Symbol  
Unit  
Test condition  
Min. Typ. Max.  
Min.  
-
Typ.  
Max.  
VOUT1-1  
VOUT1-2  
VOUT2-1  
VOUT2-2  
VOUT3-1  
VOUT3-2  
VOUT4-1  
VOUT4-2  
Icc  
Output Voltage1-1  
Output Voltage1-2  
Output Voltage2-1  
Output Voltage2-2  
Output Voltage3-1  
Output Voltage3-2  
Output Voltage4-1  
Output Voltage4-2  
Operating Current  
Standby Current  
2.9  
2.9  
3.0  
3.0  
2.9  
2.9  
2.8  
2.8  
2.7  
2.7  
-
3.2  
3.1  
V
V
V
V
V
V
V
V
3.2V≦Vcc2≦3.6V, IOUT=0,2mA, VSET=1,0=[1:1]  
3.2V≦Vcc2≦3.6V, IOUT=2,10mA, VSET=1,0=[1:1]  
3.1V≦Vcc2≦3.6V, IOUT=0,2mA, VSET=1,0=[1:0]  
3.1V≦Vcc2≦3.6V, IOUT=2,10mA, VSET=1,0=[1:0]  
3.0V≦Vcc2≦3.6V, IOUT=0,2mA, VSET=1,0=[0:1]  
3.0V≦Vcc2≦3.6V, IOUT=2,10mA, VSET=1,0=[0:1]  
2.9V≦Vcc2≦3.6V, IOUT=0,2mA, VSET=1,0=[0:0]  
2.9V≦Vcc2≦3.6V, IOUT=2,10mA, VSET=1,0=[0:0]  
Vcc1 Rise Time  
tVcc1  
5
-
msec Vcc1x0%→Vcc1x95%point  
msec Vcc1x0%point→LDOEN=High  
LDOEN Wait Time  
tLDOEN  
15  
2.8  
3.1  
2.8  
3.0  
2.7  
3.0  
2.7  
2.9  
2.6  
2.9  
2.6  
2.8  
BLOCKꢀDIAGRAM  
-
200  
1.0  
μA Vcc2=3.6V, IOUT=0A  
ISB  
-
-
μA Vcc2=3.6V, IOUT=0A, LDOEN=GND  
VOLTAGE  
INSTRUCTION  
DECODE  
Vcc2+0.3  
0.6  
"H"Input Voltage  
"L"Input Voltage  
VIH  
1.4  
-
V
V
2.9V≦Vcc2≦3.6V  
2.9V≦Vcc2≦3.6V  
CSB  
DETECTION  
-0.3Vcc2  
VIL  
-
CONTROL CLOCK  
○This product is not designed for protection against radioactive rays.  
HIGH VOLTAGE  
GENERATOR  
SCK  
SI  
WRITE  
INHIBITION  
◇ PIN No. / PIN NAME  
PIN No. PIN NAME  
INSTRUCTION  
REGISTER  
ADDRESS  
ADDRESS  
11bit  
8bit  
11bit  
8bit  
A1  
A2  
A3  
B1  
B2  
B3  
C1  
C2  
C3  
Vcc1  
CSB  
SCK  
Vcc2  
SI  
REGISTER  
DECODER  
16,384 bit  
EEPROM  
R/W  
AMP  
DATA  
REGIST  
SO  
2bit  
LDOEN  
B.R  
+
AMP  
VOUT  
SO  
-
VOUT  
GND  
LDOEN  
VOUT SETTING REGISTER  
RESISTOR  
Fig.1ꢀBLOCKꢀDIAGRAM  
REV. A  

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