2/4
◇ MEMORY CELL CHARACTERISTICS(Ta=25℃, Vcc1=1.6~3.6V)
Specification
Parameter
Unit
Min.
100,000
10
Typ.
-
Max.
Write/Erase Cycle
Data Retention
*1
*1
-
-
Cycle
Year
-
◇ EEPROM DC OPERATING CHARACTERISTICS
(Unless otherwise specified Ta=-30~85℃, Vcc1=1.6~3.6V)
Specification
◇ EEPROM AC OPERATING CHARACTERISTICS
(Ta=-30~85℃)
1.6V≦Vcc1<1.8V
1.8V≦Vcc1≦3.6V
Parameter
Symbol
Unit
test condition
Parameter
Symbol
Unit
Min. Typ. Max.
Min. Max.
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Min.
-
80
80
90
60
60
50
50
20
20
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
5
0.7xVcc1
0.75xVcc1
Vcc1+0.3
Vcc1+0.3
0.3xVcc1
0.25xVcc1
"H" Input Voltage1
"H" Input Voltage2
"L" Input Voltage1
"L" Input Voltage2
VIH1
VIH2
VIL1
VIL2
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
2.5V≦Vcc1≦3.6V
SCK clock Frequency
SCK High Time
fSCK
tSCKWH
tSCKWL
tCS
-
200
200
200
150
150
50
2.5
-
-
-
-
-
-
-
-
-
100
-
MHz
ns
1.6V≦Vcc1<2.5V
-
-
-
-
-
-
-
-
-
80
-
-0.3
-0.3
0
2.5V≦Vcc1≦3.6V
SCK Low Time
ns
1.6V≦Vcc1<2.5V
CSB High Time
CSB Setup Time
CSB Hold Time
SCK Setup Time
SCK Hold Time
SI Setup Time
ns
"L" Output Voltage1 VOL1
"L" Output Voltage2 VOL2
"H" Output Voltage1 VOH1
"H" Output Voltage2 VOH2
0.2
0.2
IOL=1.0mA, 2.5V≦Vcc1≦3.6V
IOL=1.0mA, 1.6V≦Vcc1<2.5V
IOH=-0.4mA, 2.5V≦Vcc1≦3.6V
IOH=-100μA, 1.6V≦Vcc1<2.5V
tCSS
tCSH
tSCKS
tSCKH
tDIS
ns
0
ns
Vcc1-0.2
Vcc1-0.2
-1
Vcc1
Vcc1
1
ns
50
ns
Input Leakage Current
ILI
μA VIN=0V~Vcc1
50
ns
Output Leakage Current ILO
-1
1
μA VOUT=0V~Vcc1 , CSB=Vcc1
Vcc1=1.8V, fSCK=2MHz, tE/W=5ms
mA
SI Hold Time
tDIH
50
ns
Output Data Delay Time
Output Hold Time
Output Disable Time
SCK Rise Time
tPD
-
ns
ICC1
-
-
-
1.5
2.0
0.2
Byte Write,Page Write, Write Status Register
tOH
0
0
ns
Operating current
Write
Vcc1=2.5V , fSCK=5MHz , tE/W=5ms
mA
Byte Write,Page Write, Write Status Register
*1
*1
*1
tOZ
-
200
1
-
80
1
ns
ICC2
ICC3
-
-
tRC
-
-
μs
μs
Vcc1=1.8V , fSCK=2MHz, SO=OPEN
SCK Fall Time
tFC
-
1
-
1
-
mA
Read,Read Status Register
Output Rise Time
Output Fall Time
*1
*1
tRO
tFO
-
-
-
-
-
-
50
50
5
-
-
-
-
-
50
50
5
ns
ns
Operating Current
Read
Vcc1=2.5V , fSCK=5MHz, SO=OPEN
ICC4
-
-
-
-
0.6
1.0
mA
Read,Read Status Register
Write Cycle Time
tE/W
-
ms
Standby Current
ISB
μA Vcc1=3.6V, CSB=SCK=SI=Vcc1/GND,SO=OPEN
Wait Time From Vcc1 on To
EEPROM Command
tON
15
-
-
15
-
-
ms
*1ꢀNot 100% TESTED
LDO REGULATOR AC OPERATING CHARACTERISTICS
(Ta=-30~85℃)
◇ LDO REGULATOR DC OPERATING CHARACTERISTICS
(Unless otherwise specified Ta=-30~85℃, Vcc2=2.9~3.6V)
Specification
◇
2.9V≦Vcc≦3.6V
Parameter
Symbol
Unit
Test condition
Parameter
Symbol
Unit
Test condition
Min. Typ. Max.
Min.
-
Typ.
-
Max.
VOUT1-1
VOUT1-2
VOUT2-1
VOUT2-2
VOUT3-1
VOUT3-2
VOUT4-1
VOUT4-2
Icc
Output Voltage1-1
Output Voltage1-2
Output Voltage2-1
Output Voltage2-2
Output Voltage3-1
Output Voltage3-2
Output Voltage4-1
Output Voltage4-2
Operating Current
Standby Current
2.9
2.9
3.0
3.0
2.9
2.9
2.8
2.8
2.7
2.7
-
3.2
3.1
V
V
V
V
V
V
V
V
3.2V≦Vcc2≦3.6V, IOUT=0,2mA, VSET=1,0=[1:1]
3.2V≦Vcc2≦3.6V, IOUT=2,10mA, VSET=1,0=[1:1]
3.1V≦Vcc2≦3.6V, IOUT=0,2mA, VSET=1,0=[1:0]
3.1V≦Vcc2≦3.6V, IOUT=2,10mA, VSET=1,0=[1:0]
3.0V≦Vcc2≦3.6V, IOUT=0,2mA, VSET=1,0=[0:1]
3.0V≦Vcc2≦3.6V, IOUT=2,10mA, VSET=1,0=[0:1]
2.9V≦Vcc2≦3.6V, IOUT=0,2mA, VSET=1,0=[0:0]
2.9V≦Vcc2≦3.6V, IOUT=2,10mA, VSET=1,0=[0:0]
Vcc1 Rise Time
tVcc1
5
-
msec Vcc1x0%→Vcc1x95%point
msec Vcc1x0%point→LDOEN=High
LDOEN Wait Time
tLDOEN
15
-
2.8
3.1
2.8
3.0
2.7
3.0
2.7
2.9
2.6
2.9
2.6
2.8
◇BLOCKꢀDIAGRAM
-
200
1.0
μA Vcc2=3.6V, IOUT=0A
ISB
-
-
μA Vcc2=3.6V, IOUT=0A, LDOEN=GND
VOLTAGE
INSTRUCTION
DECODE
Vcc2+0.3
0.6
"H"Input Voltage
"L"Input Voltage
VIH
1.4
-
V
V
2.9V≦Vcc2≦3.6V
2.9V≦Vcc2≦3.6V
CSB
DETECTION
-0.3Vcc2
VIL
-
CONTROL CLOCK
○This product is not designed for protection against radioactive rays.
HIGH VOLTAGE
GENERATOR
SCK
SI
WRITE
INHIBITION
◇ PIN No. / PIN NAME
PIN No. PIN NAME
INSTRUCTION
REGISTER
ADDRESS
ADDRESS
11bit
8bit
11bit
8bit
A1
A2
A3
B1
B2
B3
C1
C2
C3
Vcc1
CSB
SCK
Vcc2
SI
REGISTER
DECODER
16,384 bit
EEPROM
R/W
AMP
DATA
REGIST
SO
2bit
LDOEN
B.R
+
AMP
VOUT
SO
-
VOUT
GND
LDOEN
VOUT SETTING REGISTER
RESISTOR
Fig.1ꢀBLOCKꢀDIAGRAM
REV. A