Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1506DX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
VCESM
VCEO
IC
Collector-emitter voltage peak value
VBE = 0 V
-
1500
700
5
V
V
Collector-emitter voltage (open base)
Collector current (DC)
-
-
-
A
ICM
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
8
A
Ptot
VCEsat
ICsat
VF
Ths ≤ 25 ˚C
-
32
5.0
-
2.0
0.5
W
V
IC = 3.0 A; IB = 0.79 A
-
3.0
1.6
0.25
A
IF = 3.0 A
ICM = 3.0 A; IB(end) = 0.67 A
V
tf
Fall time
µs
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
c
case
base
2
collector
emitter
b
3
Rbe
case isolated
1
2 3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
VCESM
VCEO
IC
Collector-emitter voltage peak value
VBE = 0 V
-
1500
700
5
V
V
Collector-emitter voltage (open base)
Collector current (DC)
-
-
A
ICM
Collector current peak value
Base current (DC)
-
8
A
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
-
3
8
100
8
32
150
150
A
Base current peak value
Reverse base current
-
A
average over any 20 ms period
-
mA
A
Reverse base current peak value 1
Total power dissipation
Storage temperature
-
-
Ths ≤ 25 ˚C
W
˚C
˚C
-40
-
Junction temperature
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Rth j-hs
Rth j-a
Junction to heatsink
Junction to ambient
with heatsink compound
in free air
-
4.0
-
K/W
K/W
55
1 Turn-off current.
September 1997
1
Rev 1.300