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BU1506

更新时间: 2024-09-30 22:27:59
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
7页 71K
描述
Silicon Diffused Power Transistor

BU1506 数据手册

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Philips Semiconductors  
Product specification  
Silicon Diffused Power Transistor  
BU1506DX  
GENERAL DESCRIPTION  
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated  
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television  
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low  
worst case dissipation.  
QUICK REFERENCE DATA  
SYMBOL PARAMETER  
CONDITIONS  
TYP. MAX. UNIT  
VCESM  
VCEO  
IC  
Collector-emitter voltage peak value  
VBE = 0 V  
-
1500  
700  
5
V
V
Collector-emitter voltage (open base)  
Collector current (DC)  
-
-
-
A
ICM  
Collector current peak value  
Total power dissipation  
Collector-emitter saturation voltage  
Collector saturation current  
Diode forward voltage  
8
A
Ptot  
VCEsat  
ICsat  
VF  
Ths 25 ˚C  
-
32  
5.0  
-
2.0  
0.5  
W
V
IC = 3.0 A; IB = 0.79 A  
-
3.0  
1.6  
0.25  
A
IF = 3.0 A  
ICM = 3.0 A; IB(end) = 0.67 A  
V
tf  
Fall time  
µs  
PINNING - SOT186A  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
c
case  
base  
2
collector  
emitter  
b
3
Rbe  
case isolated  
1
2 3  
e
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN. MAX. UNIT  
VCESM  
VCEO  
IC  
Collector-emitter voltage peak value  
VBE = 0 V  
-
1500  
700  
5
V
V
Collector-emitter voltage (open base)  
Collector current (DC)  
-
-
A
ICM  
Collector current peak value  
Base current (DC)  
-
8
A
IB  
IBM  
-IB(AV)  
-IBM  
Ptot  
Tstg  
Tj  
-
3
8
100  
8
32  
150  
150  
A
Base current peak value  
Reverse base current  
-
A
average over any 20 ms period  
-
mA  
A
Reverse base current peak value 1  
Total power dissipation  
Storage temperature  
-
-
Ths 25 ˚C  
W
˚C  
˚C  
-40  
-
Junction temperature  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
TYP. MAX. UNIT  
Rth j-hs  
Rth j-a  
Junction to heatsink  
Junction to ambient  
with heatsink compound  
in free air  
-
4.0  
-
K/W  
K/W  
55  
1 Turn-off current.  
September 1997  
1
Rev 1.300  

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